si4477dy Vishay, si4477dy Datasheet

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si4477dy

Manufacturer Part Number
si4477dy
Description
P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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si4477dy-T1-GE3
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VISHAY
Quantity:
25 000
Part Number:
si4477dy-T1-GE3
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VISHAY
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si4477dy-T1-GE3
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si4477dy-T1-GE3
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70 000
Company:
Part Number:
si4477dy-T1-GE3
Quantity:
70 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 80 °C/W.
d. Based on T
Document Number: 64829
S09-0858-Rev. A, 18-May-09
Ordering Information: Si4477DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
PRODUCT SUMMARY
V
DS
- 20
(V)
C
= 25 °C.
0.0062 at V
0.0105 at V
G
S
S
S
R
1
2
3
4
DS(on)
GS
GS
Top View
J
(Ω)
SO-8
= - 4.5 V
= - 2.5 V
= 150 °C)
a, c
P-Channel 20-V (D-S) MOSFET
8
7
6
5
I
D
- 26.6
- 20.6
(A)
D
D
D
D
d
A
= 25 °C, unless otherwise noted
Q
g
59 nC
Steady State
(Typ.)
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Load Switch
• Adapter Switch
Definition
Compliant to RoHS Directive 2002/95/EC
- Notebook
- Game Station
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
g
stg
Tested
®
Power MOSFET
Typical
34
15
- 55 to 150
- 14.5
G
- 2.5
1.95
- 18
- 26.6
- 21.3
Limit
± 12
- 5.5
3
Maximum
- 20
- 60
6.6
4.2
30
45
a, b
P-Channel MOSFET
a, b
a, b
a, b
a, b
Vishay Siliconix
41
19
S
D
Si4477DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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si4477dy Summary of contents

Page 1

... Top View Ordering Information: Si4477DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy ...

Page 2

... Si4477DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 64829 S09-0858-Rev. A, 18-May- 1 1.5 2.0 2.5 6000 5000 4000 3000 2000 1000 Si4477DY Vishay Siliconix 1.5 1.2 0.9 0 ° 125 ° °C C 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...

Page 4

... Si4477DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 ° 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.55 0.40 0.25 0.10 - 0.05 - 0. Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1 250 µ ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.0 1.6 1.2 0.8 0.4 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4477DY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 ...

Page 6

... Si4477DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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