si4488dy Vishay, si4488dy Datasheet

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si4488dy

Manufacturer Part Number
si4488dy
Description
N-channel 150-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes
a.
Document Number: 71240
S-03951—Rev. B, 26-May-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanch Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
150
Ordering Information: Si4488DY
(V)
J
ti
G
S
S
S
t A bi
1
2
3
4
J
J
a
a
0.050 @ V
= 150_C)
= 150_C)
t
a
a
Si4488DY-T1 (with Tape and Reel)
Top View
Parameter
Parameter
r
SO-8
DS(on)
a
a
GS
N-Channel 150-V (D-S) MOSFET
(W)
= 10 V
8
7
6
5
a
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
5.0
(A)
G
N-Channel MOSFET
Symbol
Symbol
T
R
R
R
V
J
V
I
I
P
P
DM
, T
I
I
AS
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
D
S
10 secs
Typical
5.0
4.0
2.8
3.1
2.0
33
65
17
- 55 to 150
"20
150
50
25
Steady State
Maximum
Vishay Siliconix
1.56
3.5
2.8
1.4
1.0
40
80
21
Si4488DY
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
A
1

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si4488dy Summary of contents

Page 1

... SO Top View Ordering Information: Si4488DY Si4488DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Avalanch Current ...

Page 2

... Si4488DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Document Number: 71240 S-03951—Rev. B, 26-May-03 3000 2500 2000 1500 1000 25_C J 0.8 1.0 1.2 Si4488DY Vishay Siliconix Capacitance C iss C 500 rss C oss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 2.0 1 ...

Page 4

... Si4488DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 0.5 = 250 0.0 - 0.5 - 1 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 100 10 1 0.1 100 125 150 Single Pulse Power 60 50 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 71240 S-03951—Rev. B, 26-May- Square Wave Pulse Duration (sec) Si4488DY Vishay Siliconix 10 100 1000 www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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