2sk1657 Renesas Electronics Corporation., 2sk1657 Datasheet

2sk1657

Manufacturer Part Number

2sk1657

Description

N-channel Mos Fet For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.2SK1657.pdf (5 pages)

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Document No. D17806EJ2V0DS00 (2nd edition)

(Previous No. TC-2360)

Date Published November 2005 NS CP(K)

Printed in Japan

DESCRIPTION

can be driven by 2.5 V power supply.

filter circuit.

FEATURES

• Directly driven by ICs having a 3 V power supply.

• Has low Gate Leakage Current

ORDERING INFORMATION

Marking: G19

ABSOLUTE MAXIMUM RATINGS (T

Note PW ≤ 10 ms, Duty Cycle ≤ 50%

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Drain to Source Voltage (V

The 2SK1657 is an N-channel vertical type MOSFET which

As the MOSFET is low Gate Leakage Current, it is suitable for

GSS

= ±5 nA MAX. (V

PART NUMBER

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

2SK1657

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Note

= ±3.0 V)

= 0 V)

SC-59 (Mini Mold)

PACKAGE

N-CHANNEL MOSFET

= 25°C)

FOR SWITCHING

DATA SHEET

D(pulse)

D(DC)

DSS

GSS

stg

−55 to +150

MOS FIELD EFFECT TRANSISTOR

±100

±200

±7.0

200

150

°C

PACKAGE DRAWING (Unit: mm)

2.8 ±0.2

1.5

EQUIVALENT CIRCUIT

Gate

Protection

Diode

2SK1657

Marking

0.65

Source

+0.1

–0.15

Drain

1. Source

2. Gate

3. Drain

Body

Diode

1991

Related parts for 2sk1657

2sk1657 Summary of contents

Page 1

... DESCRIPTION The 2SK1657 is an N-channel vertical type MOSFET which can be driven by 2.5 V power supply. As the MOSFET is low Gate Leakage Current suitable for filter circuit. FEATURES • Directly driven by ICs having power supply. • Has low Gate Leakage Current l = ±5 nA MAX ± ...

Page 2

... R d(off 90 10 10% 10 d(on) r d(off off Data Sheet D17806EJ2V0DS 2SK1657 MIN. TYP. MAX. UNIT μ ±5.0 nA 0.9 1.2 1 Ω Ω 1 ...

Page 3

... TYPICAL CHARACTERISTICS ( 25°C) Data Sheet D17806EJ2V0DS 2SK1657 3 ...

Page 4

... Data Sheet D17806EJ2V0DS 2SK1657 ...

Page 5

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK1657 M8E 02. 11-1 ...

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