2sk1254 Renesas Electronics Corporation., 2sk1254 Datasheet

no-image

2sk1254

Manufacturer Part Number
2sk1254
Description
Silicon N-channel Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK1254
Quantity:
50
Part Number:
2SK1254
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
2sk1254(L,S)
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2sk1254L
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2sk1254S
Manufacturer:
PANASONIC
Quantity:
12 500
Application
High speed power switching
Features
Outline
Low on-resistance
High speed switching
4 V gate drive device
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Can be driven from 5 V source
2SK1254(L), 2SK1254(S)
Silicon N-Channel MOS FET
DPAK-1
G
S
D
1
2 3
4
1
2
3
4
1. Gate
2. Drain
3. Source
4. Drain

Related parts for 2sk1254

2sk1254 Summary of contents

Page 1

... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol ...

Page 3

... Turn-off delay time t d(off) Fall time t f Body to drain diode forward V DF voltage Body to drain diode reverse t rr recovery time Note: 1. Pulse test 2SK1254(L), 2SK1254(S) Typ Max Unit 120 — — — — V — — — — 100 A 1 ...

Page 4

... Power vs. Temperature Derating 100 Case Temperature T C Typical Output Characteristics 5 Pulse Test 2 Drain to Source Voltage V 4 Maximum Safe Operation Area 1.0 0.5 0.2 0 25°C 0.05 150 1 3 (°C) Drain to Source Voltage V ...

Page 5

... Pulse Test 0.2 0 – 120 Case Temperature T (°C) C 2SK1254(L), 2SK1254(S) Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1.0 0.5 0.2 0.1 0.05 10 0.2 0.5 1.0 2.0 Drain Current I Forward Transfer Admittance vs. Drain Current 25°C 5 ...

Page 6

... Body to Drain Diode Reverse Recovery Time 500 di/ 25° 200 Pulse Test 100 0.1 0.2 0.5 1.0 2 Reverse Drain Current I Dynamic Input Characteristics 100 Gate Charge Qg (nc ...

Page 7

... Normalized Transient Thermal Impedance vs. Pulse Width 1.0 0.5 0.3 0.1 0.03 0.01 10 100 1 m Switching Time Test Circuit Vin Monitor D.U Vin = 2SK1254(L), 2SK1254(S) Reverse Drain Current vs. Source to Drain Voltage – 0.4 0.8 1.2 1.6 2.0 (V) SD ch–c (t) = ch–c = 6.25°C/ 100 m ...

Page 8

Hitachi Code DPAK (L)-(1) JEDEC — EIAJ Conforms Weight (reference value) 0.42 g Unit: mm ...

Page 9

Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...

Related keywords