2sk1579 Renesas Electronics Corporation., 2sk1579 Datasheet
2sk1579
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2sk1579 Summary of contents
Page 1
... Silicon N Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Suitable for low voltage operation Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK Note: Marking is “DY”. Rev.2.00 Sep 07, 2005 page *UPAK is a trademark of Renesas Technology Corp ...
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... Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel power dissipation Channel temperature Storage temperature Notes 100 µs, duty cycle 2. Value on the alumina ceramic board (12.5 Electrical Characteristics ...
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... Main Characteristics Maximum Channel Power Dissipation Curve 1.6 1.2 0.8 0 100 Ambient Temperature Typical Output Characteristics 3 1 Drain to Source Voltage V Drain to Source on State Resistance vs. Gate to Source Voltage 0.5 0.4 0.3 0 25°C 0.1 Pulse Test Gate to Source Voltage V Rev ...
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... Static Drain to Source on State Resistance vs. Temperature 1.0 Pulse Test 0.8 0 0 – Case Temperature T Reverse Drain Current vs. Source to Drain Voltage 5 Pulse Test 1.0 Source to Drain Voltage V Switching Characteristics 5,000 µ ...
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... Max 0.53 Max 0.48 Max 1.5 1.5 Ordering Information Part Name 2SK1579DY 3000 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page Package Name MASS[Typ.] UPAK / UPAKV 0.050g 1.5 ± ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...