2sk3862 Panasonic Corporation of North America, 2sk3862 Datasheet
2sk3862
Manufacturer Part Number
2sk3862
Description
Silicon N-channel Junction Fet
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SK3862.pdf
(4 pages)
Silicon Junction FETs (Small Signal)
2SK3862
Silicon N-channel junction FET
For impedance conversion in low frequency
For electret capacitor microphone
Features
Absolute Maximum Ratings T
Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2008
Low noise voltage NV
High voltage gain GV
Thin package: TSSSMini3-F1 (1.2 mm × 1.2 mm × 0.33 mm)
Drain-source voltage (Gate open)
Drain-gate voltage (Souece open)
Drain-source current (Gate open)
Drain-gate current (Souece open)
Power dissipation
Operating ambient temperature
Storage temperature
Drain current
Drain-source current
Forward transfer conductance
Noise voltage
Voltage gain
Voltage gain difference
Gate resistance
2. A protection diode is built-in between gate and source of transistor. However if forward current flows between gate and source transistor
3. *1: I
might be damaged. So please be careful not insert reverse.
* 2: Rank classification
* 3: NV is assured for design.
* 4: D|G
D
Parameter
* 1
* 3
is assured for I
Parameter
I
V
DSS
. f | is assured for AQL 0.065%. (The measurement method is used by source-grounded circuit.)
Rank
(mA)
* 2
DSS
107 to 150
.
R
a
= 25°C±3°C
a
= 25°C
G
This product complies with the RoHS Directive (EU 2002/95/EC).
DG
Symbol
Symbol
V
V
I
V1
I
Y
T
T
DGO
DSO
P
I
DGO
G
G
G
DSO
NV
opr
V
stg
DSS
R
I
130 to 220
D
– G
D
V1
V2
V3
fs
. f
g
V3
S
* 4
–55 to +125
–20 to +80
Rating
V
V
V
V
C
V
C
V
C
V
C
V
C
f = 1 kHz to 70 Hz
100
20
20
DS
DS
D
D
O
D
O
D
O
D
O
D
O
2
2
= 2.0 V, V
= 2.0 V, R
= 5 pF, A-curve
= 2.0 V, R
= 5 pF, e
= 12 V, R
= 5 pF, e
= 1.5 V, R
= 5 pF, e
= 2.0 V, R
= 5 pF, e
= 2.0 V, R
= 2.0 V, R
SJF00093AED
180 to 315
T
G
G
G
G
d
GS
d
d
d
d
Unit
mW
= 10 mV, f = 1 kHz
= 10 mV, f = 1 kHz
= 10 mV, f = 1 kHz
= 10 mV
mA
mA
Conditions
d
d
= 2.2 kW ± 1%
°C
°C
= 2.2 kW ± 1%
= 2.2 kW ± 1%
= 2.2 kW ± 1%
= 2.2 kW ± 1%
V
V
= 2.2 kW ± 1%
= 2.2 kW ± 1%, V
= 0, f = 1 kHz
285 to 460
U
Package
Marking Symbol: 5D
Code
Pin Name
GS
TSSSMini3-F1
1: Drain
2: Source
3: Gate
= 0
–5.0
–3.0
–7.0
Min
100
107
660
0
8
1 500
Typ
–1.0
–1.5
3.0
0.5
10
Max
470
460
1.7
2.0
4
Unit
GW
mV
mA
mA
dB
dB
mS
1
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2sk3862 Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Silicon Junction FETs (Small Signal) 2SK3862 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone Features Low noise voltage NV High voltage gain GV Thin package: TSSSMini3-F1 (1.2 mm × 1.2 mm × 0.33 mm) ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SK3862 2SK3862_ 120 120 ( °C ) Ambient temperature T a 2SK3862_ Y Y 0 25°C a 0.3 0.2 0.1 0 0.4 0 Gate-source voltage 2SK3862_ ...
Page 3
... This product complies with the RoHS Directive (EU 2002/95/EC). TSSSMini3-F1 +0.05 0.33 −0. +0.05 0.23 −0.02 (0.40) (0.40) 0.80 ±0.05 1.20 ±0.05 5° Unit: mm +0.05 0.08 −0.02 SJF00093AED 2SK3862 3 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...