2sk3115b-s17-ay Renesas Electronics Corporation., 2sk3115b-s17-ay Datasheet - Page 6

• Manufacturer Part Number: 2sk3115b-s17-ay
• Description: 2sk31 Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

PACKAGE DRAWING (Unit: mm)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
6
Isolated TO-220 (MP-45F)
100
1.0
0.1
1.47 MAX
10
2.54 TYP.
10 μ
0.8±0.2
R
V
V
Starting T
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
DD
GS
G
= 25 Ω
= 150 V
= 20
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
10.0±0.3
1 2 3
→
ch
= 25
0 V
100 μ
L - Inductive Load - H
I
˚C
AS
2.54 TYP.
= 6.0 A
3.2±0.2
1 m
1. Gate
2. Drain
3. Source
0.50±0.1
4.7±0.2
E
AS
= 24 mJ
2.76±0.2
2.54 ±0.2
10 m
Data Sheet D18065EJ2V0DS
120
100
80
60
40
20
0
25
Starting T
EQUIVALENT CIRCUIT
Gate (G)
SINGLE AVALANCHE ENERGY
DERATING FACTOR
50
ch
- Starting Channel Temperature - °C
75
Source (S)
Drain (D)
100
V
R
V
I
Body
Diode
AS
DD
GS
G
≤ 6.0 A
= 25 Ω
= 150 V
= 20
125
→
2SK3115B
0 V
150