si2200 Silicon Laboratories, si2200 Datasheet - Page 8

• Manufacturer Part Number: si2200
• Description: Rf Synthesizer With Integrated Vcos Integrated Vcos - Silicon Laboratories
• Manufacturer: Silicon Laboratories

Table 5. RF and IF Synthesizer Characteristics
(V
Si2200
8
Parameter
XIN Input Frequency
XIN Input Frequency
Reference Amplifier Sensitivity
Phase Detector Update Frequency
RF1 VCO Tuning Range
RF2 VCO Tuning Range
IF VCO Center Frequency Range
IFOUT Tuning Range from f
IFOUT VCO Tuning Range from f
RF1 VCO Pushing
RF2 VCO Pushing
IF VCO Pushing
RF1 VCO Pulling
RF2 VCO Pulling
IF VCO Pulling
RF1 Phase Noise
RF1 Integrated Phase Error
RF2 Phase Noise
RF2 Integrated Phase Error
IF Phase Noise at 800 MHz
IF Integrated Phase Error
Notes:
DD
1. f (RF)
2. RF VCO tuning range limits are fixed by inductance of internally bonded wires.
3. From powerup request (PWDN or SEN during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF
4. From powerdown request (PWDN , or SEN during a write of 0 to bits PDIB and PDRB in Register 2) to supply current
= 2.7
synthesizers ready (settled to within 0.1 ppm frequency error).
equal to I
to 3.6 V, T
1
=
1 MHz, f (IF)
PWDN
A
.
=
–40 to 85 °C)
2
2
=
CEN
1 MHz, RF1 = 2.4 GHz, RF2 = 2.1 GHz, IFOUT = 800 MHz, LPWR = 0.
CEN
Symbol
V
f
f
f
CEN
REF
REF
f
REF
Rev. 1.0
phases, open loop
100 Hz to 100 kHz
100 Hz to 100 kHz
100 Hz to 100 kHz
VSWR = 2:1, all
f = f
100 kHz offset
Test Condition
f = f
Note: L ±10%
XINDIV2 = 0
XINDIV2 = 1
XINDIV2 = 0
XINDIV2 = 1
1 MHz offset
1 MHz offset
with IFDIV
Open loop
REF
REF
/2R for
/R for
0.010
2300
2025
62.5
526
Min
0.5
25
–5
—
—
—
—
—
—
—
—
—
—
—
—
2
0.250
0.100
0.025
–130
–131
–104
0.75
0.65
0.10
Typ
1.2
1.0
0.4
—
—
—
—
—
—
—
—
—
+0.3 V
2500
2300
1000
V
Max
952
1.0
25
50
—
—
—
—
—
—
—
—
—
—
—
—
5
DD
MHz p-p
MHz p-p
MHz p-p
degrees
degrees
degrees
dBc/Hz
dBc/Hz
dBc/Hz
MHz/V
MHz/V
MHz/V
MHz
MHz
MHz
MHz
MHz
MHz
MHz
Unit
V
rms
rms
rms
%
PP