si2304dds Vishay, si2304dds Datasheet
si2304dds
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si2304dds Summary of contents
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... GS TO-236 (SOT-23 Top View Si2304DDS (P4)* * Marking Code Ordering Information: Si2304DDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si2304DDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Document Number: 65175 S09-1496-Rev. A, 10-Aug- thru 2.0 2.5 3.0 300 250 200 150 100 1.6 1.5 1.4 1.3 1 1.1 1.0 0.9 0.8 0 Si2304DDS Vishay Siliconix ° ° 125 ° 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss 50 C rss 0 ...
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... Si2304DDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.3 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.4 2.2 2 1.8 1.6 1.4 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.14 0.12 0. °C J 0.08 0.06 0.04 1.2 1 250 µ 100 125 150 0 ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65175 S09-1496-Rev. A, 10-Aug-09 2.0 1.5 1.0 0.5 0.0 100 125 150 25 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si2304DDS Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating www.vishay.com 5 ...
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... Si2304DDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... 0. 0.004" Seating Plane C MILLIMETERS Max 1.12 0.10 1.02 0.50 0.18 3.04 2.64 1.40 0.95 BSC 1.90 BSC 0.60 0.64 Ref 0.50 Ref 8° Package Information Vishay Siliconix 0. Gauge Plane Seating Plane INCHES Min Max 0.035 0.044 0.0004 0.004 0.0346 0.040 0.014 0.020 0.003 0.007 0.110 0.120 0.083 0.104 0.047 ...
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... See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET footprint ...
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... RECOMMENDED MINIMUM PADS FOR SOT-23 Return to Index Return to Index Document Number: 72609 Revision: 21-Jan-08 0.037 0.022 (0.950) (0.559) 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix www.vishay.com 25 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...