irf7210 International Rectifier Corp., irf7210 Datasheet

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irf7210

Manufacturer Part Number
irf7210
Description
Hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet

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IRF7210
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irf7210TR
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l
l
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Thermal Resistance
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques.
www.irf.com
V
I
I
I
P
P
V
V
T
R
D
D
DM
J,
DS
D
D
GS
GSM
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
ƒ
@ -4.5V
@ -4.5V
G
S
S
S
1
2
3
4
Top View
HEXFET Power MOSFET
8
7
6
5
-55 to + 150
Max.
Max.
±100
0.02
D
D
±16
±12
± 12
50
D
D
-12
2.5
1.6
A
16
R
IRF7210
DS(on)
V
DSS
= 0.007Ω
= -12V
Units
Units
10/19/04
W/°C
°C/W
°C
V
A
V
V
1

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irf7210 Summary of contents

Page 1

... Maximum Junction-to-Ambient θJA www.irf.com HEXFET Power MOSFET Top View Max. @ -4. -4.5V GS ±100 0.02 - 150 Max. ƒ IRF7210 -12V DSS 0.007Ω D DS(on) Units -12 V ±16 ±12 A 2.5 1.6 W/°C ± °C Units 50 ° ...

Page 2

... IRF7210 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 -16A 1.5 1 150°C J 0.5 0.0 A -60 -40 -20 6.0 8.0 Fig 4. Normalized On-Resistance IRF7210 VGS 300µs PULSE WIDTH -1. 150°C -1.6V J -1.4V -1.2V -1.0V -0. Drain-to-Source Voltage ( -4. 100 120 140 160 ° Junction Temperature ( ...

Page 4

... IRF7210 24000 1MHz iss rss oss ds gd 20000 C iss 16000 12000 C oss C rss 8000 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 T = 25°C J 100 10 1 0.0 2.0 4.0 6 Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.001 0.01 Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Notes: 1. Duty factor Peak 0 Rectangular Pulse Duration (sec) 1 IRF7210 thJA A 10 100 5 ...

Page 6

... IRF7210 SO-8 Package Details 0.25 (.010 0.25 (.010 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0 ...

Page 7

... SO-8 Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. www.irf.com FEED DIRECTION 330.00 (12.992) MAX. IRF7210 12.3 ( .484 ) 11.7 ( .461 ) 14.40 ( .566 ) 12.40 ( .488 ) 7 ...

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