si8235 Silicon Laboratories, si8235 Datasheet - Page 18

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si8235

Manufacturer Part Number
si8235
Description
0.5 And 4.0 A Isodrivers
Manufacturer
Silicon Laboratories
Datasheet

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Si823x
6. Applications
The following examples illustrate typical circuit configurations using the Si823x.
6.1. High-Side/Low-Side Driver
Figure 10A shows the Si8230/3 controlled using the VIA and VIB input signals, and Figure 10B shows the Si8231/4
controlled by a single PWM signal.
For both cases, D1 and CB form a conventional bootstrap circuit that allows VOA to operate as a high-side driver
for Q1, which has a maximum drain voltage of 600 V. VOB is connected as a conventional low-side driver. Note
that the input side of the Si823x requires VDD in the range of 4.5 to 5.5 V, while the VDDA and VDDB output side
supplies must be between 10 and 24 V. Also note that the bypass capacitors on the Si823x should be located as
close to the chip as possible. Moreover, it is recommended that 0.1, 1, and 10 µF bypass capacitors be used to
minimize high frequency and maximize performance.
18
CONTROLLER
OUT1
OUT2
I/O
1uF
C1
VDDI
RDT
VDDI
GNDI
VIA
VIB
DT
DISABLE
A
Si8230/3
Figure 10. Si823x in Half-Bridge Application
VDDA
GNDA
VDDB
GNDB
VOA
VOB
VDD2
VDDB
1 µF
10uF
C2
C3
D1
CB
Preliminary Rev. 0.11
600V max
Q2
Q1
CONTROLLER
PWMOUT
I/O
1uF
C1
VDDI
RDT
VDDI
GNDI
PWM
DT
DISABLE
B
Si8231/4
GNDA
GNDB
VDDA
VDDB
VOA
VOB
VDD2
VDDB
1 µF
10uF
C2
C3
D1
CB
600V max
Q2
Q1

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