sccw77400a ON Semiconductor, sccw77400a Datasheet

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sccw77400a

Manufacturer Part Number
sccw77400a
Description
Reflective Optical Switch.
Manufacturer
ON Semiconductor
Datasheet
SCCW77400A / SCCW77400B
Product Preview
Embedded with an infrared light emitting diode (LED) and a
phototransistor, this ASIC controls the infrared emitter, read the
detector-signal and convert it into a digital signal. The reflective
interrupter will be implemented into mobile communication devices.
Features
Typical Applications
Short to medium distance proximity sensor for:
The SCCW77400 is an ASIC for reflective optical switch.
ON Semiconductor Preliminary Specification –SCCW77400– ISSUE: 3.0 – Friday, June 05, 2009
Low current consumption: 40u A.
Operating voltage 2.3 V to 3.6 V.
Adjustable LED current.
Adjustable Threshold current.
Cell phone
PDAs
Portable entertainment devices.
Figure 1: Typical Application Circuit
ON Semiconductor reserves the right to change or discontinue this product without notice.
This document contains information on a product under development.
ON Semiconductor Confidential Proprietary
SCCW77400
1
(Chip dimensions and arrangement of bond pads. Pads for
Orderable Part Number
SCCW77400A
SCCW77400B
ORDERING INFORMATION
test and trim could be added)
http://onsemi.com
CHIP LAYOUT
ROSa_Long
Version
ROSa

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sccw77400a Summary of contents

Page 1

... ON Semiconductor Confidential Proprietary SCCW77400A / SCCW77400B Product Preview The SCCW77400 is an ASIC for reflective optical switch. Embedded with an infrared light emitting diode (LED) and a phototransistor, this ASIC controls the infrared emitter, read the detector-signal and convert it into a digital signal. The reflective interrupter will be implemented into mobile communication devices. ...

Page 2

... ON Semiconductor Confidential Proprietary PIN FUNCTION DESCRIPTION PIN PIN TYPE NAME 1 VDD POWER Supply voltage 2 GND POWER Ground 3 OUT OUTPUT Digital output, NMOS open drain 4 LED OUTPUT LED anode, supplies current to anode of emitter 5 PT INPUT Analog input from phototransistor 6 PROG INPUT Tune the LED current by connecting external resistor ...

Page 3

... ON Semiconductor Confidential Proprietary MAXIMUM RATINGS (NOTE 1) Rating VDD: Power Supply Voltage (Note 2) Input and output pin(Note 2) Output pin(Note 3) Human Body Model (HBM) ESD Rating are (Note 4) Machine Model (MM) ESD Rating are (Note 4) Latch-up protection (Note 5) Storage Temperature Range Operating Junction Temperature Range Stresses exceeding Maximum Ratings may damage the device ...

Page 4

... ON Semiconductor Confidential Proprietary ELECTRICAL CHARACTERISTICS Min & Max Limits apply for T 3.6 V (Unless otherwise noted). Typical values are referenced to T Symbol Parameter Current consumption without I I MEAN I PT Current consumption for operation in I permanent test mode (without I MEAN, (Note 9) PT LED driver ...

Page 5

... ON Semiconductor Confidential Proprietary ELECTRICAL CHARACTERISTICS Min & Max Limits apply for T 3.6 V (Unless otherwise noted). Typical values are referenced to T Symbol Parameter TST Input V Digital low level input voltage IL V Digital high level input voltage IH I Low level input current IL I High level input current ...

Page 6

... ON Semiconductor Confidential Proprietary TYPICAL OPERATING CHARACTERISTICS TBD Figure 3: I vs. Temperature st,high TBD Figure 5: I vs. R LED,on (Rprog > 450Ω) TBD Figure 7: I vs. Temperature mean (VDD = 2.3, 3, 3.6V) SCCW77400 Figure 4: I Figure 6: I prog Figure 8: Sensitivity f(amb. light) http://onsemi.com 6 TBD vs. Temperature st,hyst TBD vs ...

Page 7

... ON Semiconductor Confidential Proprietary DETAIL OPERATING DESCRIPTION Functional Descriptions Oscillator and Sequencer The operation of the ASIC is controlled by a sequencer witch is clocked by an internal oscillator. The switch operates in a pulsed mode to realize low current consumption. Most of the time the ASIC is in sleeps mode ...

Page 8

... ON Semiconductor Confidential Proprietary the appropriate switching threshold. The result of the comparison is store in a latch and occurs at the output (see Figure 10: Timing Diagram) Figure 10: Timing Diagram For shortening production test time the sleep time T can be decreased by a “High” signal on pin TST. ...

Page 9

... ON Semiconductor Confidential Proprietary V1(V) V2(V) PowerLED( AWAKE CE,BIAS SETTLING CE,BIAS T 0.2*VDD V VDD PULSE CE,BIAS SLEEP Output When the voltage supply is powered, the digital signal from the Schmitt trigger is latched in a D-type flip-flop to bridge the sleep time. The flip-flop controls an open drain NMOS low-side output stage allowing the output to be read at any time ...

Page 10

... ON Semiconductor Confidential Proprietary Mechanical data Delivery Scribe line Sawing grid Chip thickness Pad opening Chip layout SCCW77400 Tested, inked and unsawn wafer 80µm Max. 1120µm x 600µm 250±10µm, grinded and wet etched Min. 110µm x 110µm http://onsemi.com ...

Page 11

... ON Semiconductor Confidential Proprietary PARAMETERS AND FUNCTIONS UP DATE: Date Revision 7-Nov 1.0 Creation of document Updates: • Threshold current limits 28-Nov 1.1 • Product name • Chip layout Updates according to customer remarks: • Max rating table • Operating condition table 2 - Dec 2.0 • Electrical characteristics • ...

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