btb41-800 Sirectifier Semiconductors, btb41-800 Datasheet - Page 3

• Manufacturer Part Number: btb41-800
• Description: Discrete Triacs Non-isolated/isolated
• Manufacturer: Sirectifier Semiconductors

50
40
30
20
10
F ig. 3: R elative variation of thermal impeda nce
versus pulse duration.
F ig. 5: S urge peak on-s tate current vers us
number of cycles .
450
400
350
300
250
200
150
100
1.E +00
F ig. 1: Maximum power dis s ipation vers us R MS
on-s ta te current (full cycle).
1.E -01
1.E -02
1.E -03
0
50
0
0
P (W)
1
IT S M (A )
1.E -03 1.E -02 1.E -01 1.E +00 1.E +01 1.E +02 1.E +03
K =[Zth/R th]
5
Zth(j-c)
R epetitive
T c=70°C
10
B TA/B T B 41
Zth(j-a)
10
Non repetitive
T j initial=25°C
Number of cycles
15
IT (R MS ) (A )
Discrete Triacs(Non-Isolated/Isolated)
20
tp (s )
25
100
30
BTB/BTA41
t=20ms
One cycle
35
180°
1000
40
400
100
F ig.
values ).
F ig. 6:
current for a
tp < 10 ms, and corresponding value of I²t.
10000
F ig. 2: R MS on-state current vers us cas e
temperature (full cycle).
45
40
35
30
25
20
15
10
10
1000
5
0
100
1
0.5
0
IT (R MS ) (A )
IT M (A )
0.01
IT S M (A ), I² t (A ² s )
4:
1.0
T j max
dI/dt limitation:
Non-repetitive s urge pea k on-s tate
50A /µ s
On-s tate
25
1.5
T j=25°C
2.0
s inus oidal puls e
0.10
50
cha racteris tics
2.5
V T M (V )
T c (° C )
tp (ms )
B T B 41
3.0
75
IT S M
1.00
3.5
B TA 41
4.0
100
with width
(maximum
T j initial=25°C
V to = 0.85 V
R d = 10 m
T j max.:
= 180°
4.5
I²t
10.00
125
5.0