BT151S-600R NXP Semiconductors, BT151S-600R Datasheet - Page 3

• Manufacturer Part Number: BT151S-600R
• Description: Silicon-controlled Rectifier Datasheet Reference
• Manufacturer: NXP Semiconductors

Philips Semiconductors
June 1999
Thyristors
Fig.2. Maximum permissible non-repetitive peak
10
Fig.1. Maximum on-state dissipation, P
15
Fig.3. Maximum permissible rms current I
15
10
5
0
on-state current I
1000
5
0
0
-50
Ptot / W
100
IT(RMS) / A
10
conduction
angle
degrees
10us
versus mounting base temperature T
120
180
average on-state current, I
ITSM / A
30
60
90
I
1
T
Tj initial = 25 C max
dI /dt limit
sinusoidal currents, t
T
form
factor
a = form factor = I
1.9
1.57
4
2.8
2.2
a
T
2
0
I TSM
time
100us
3
TSM
4
IF(AV) / A
, versus pulse width t
Tmb / C
4
50
T / s
2.8
T(RMS)
5
p
1ms
2.2
T(AV)
/ I
10ms.
T(AV)
100
6
, where
Tmb(max) / C
1.9
103 C
.
tot
a = 1.57
7
, versus
mb
T(RMS)
p
, for
.
10ms
150
8
125
107
116
98
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
120
100
1.6
1.4
1.2
0.8
0.6
0.4
80
60
40
20
25
20
15
10
0
5
0
0.01
1
(T
-50
1
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
0.1
10
surge duration / s
, versus number of cycles, for
Tj / C
50
mb
I
T
Tj initial = 25 C max
BT151S series
100
Product specification
1
T
103˚C.
BT151M series
100
I TSM
time
Rev 1.200
1000
150
10
j
.