mac4dcm ON Semiconductor, mac4dcm Datasheet

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mac4dcm

Manufacturer Part Number
mac4dcm
Description
Silicon Bidirectional Thyristors
Manufacturer
ON Semiconductor
Datasheet

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MAC4DCM, MAC4DCN
Triacs
Silicon Bidirectional Thyristors
applications such as motor control; process control; temperature, light
and speed control.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
MAXIMUM RATINGS
May, 2006 − Rev. 6
Peak Repetitive Off−State Voltage
On−State RMS Current
Peak Non-Repetitive Surge Current
Circuit Fusing Consideration
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Designed for high volume, low cost, industrial and consumer
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Blocking Voltage to 800 V
On−State Current Rating of 4.0 A RMS at 108 C
High Immunity to dv/dt − 500 V/ms at 125 C
High Immunity to di/dt − 6.0 A/ms at 125 C
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Pb−Free Packages are Available
Semiconductor Components Industries, LLC, 2006
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(Note 1) (T
50 to 60 Hz, Gate Open)
(Full Cycle Sine Wave, 60 Hz,
T
(One Full Cycle Sine Wave, 60 Hz,
T
(t = 8.3 msec)
(Pulse Width
(t = 8.3 msec, T
(Pulse Width
(Pulse Width
DRM
C
J
= 125 C)
= 108 C)
and V
J
RRM
= −40 to 125 C, Sine Wave,
Rating
Machine Model, C u 400 V
10 msec, T
10 msec, T
10 msec, T
for all types can be applied on a continuous basis. Blocking
C
= 108 C)
(T
J
= 25 C unless otherwise noted)
MAC4DCM
MAC4DCN
C
C
C
Preferred Device
= 108 C)
= 108 C)
= 108 C)
Symbol
I
P
V
V
T(RMS)
I
P
V
G(AV)
I
T
DRM,
TSM
RRM
I
GM
T
GM
GM
2
stg
J
t
−40 to 125
−40 to 150
Value
600
800
4.0
6.6
0.5
0.1
0.5
5.0
40
1
A
Unit
2
W
W
V
A
A
A
V
sec
C
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1 2
1
2
3
3
1
2
3
4
Y
WW
AC4DCx
G
MT2
ORDERING INFORMATION
4.0 AMPERES RMS
4
4
600 − 800 VOLTS
http://onsemi.com
PIN ASSIGNMENT
CASE 369C
CASE 369D
STYLE 6
STYLE 6
DPAK−3
DPAK
TRIACS
= Year
= Work Week
= Device Code
= Pb−Free Package
x= M or N
Publication Order Number:
Main Terminal 1
Main Terminal 2
Main Terminal 2
Gate
DIAGRAMS
G
MARKING
MAC4DCM/D
MT1
4DCxG
YWW
AC
4DCxG
YWW
AC

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mac4dcm Summary of contents

Page 1

... MAC4DCM, MAC4DCN Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface Mount DPAK Package Passivated Die for Reliability and Uniformity Blocking Voltage to 800 V On− ...

Page 2

... MAC4DCMT4G MAC4DCN−001 MAC4DCN−1G MAC4DCNT4 MAC4DCNT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAC4DCM, MAC4DCN ( unless otherwise noted; Electricals apply in both directions ...

Page 3

... Quadrant II (−) I GATE I − GT Quadrant III (−) I GATE All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. MAC4DCM, MAC4DCN (Bidirectional Device) on state RRM RRM Quadrant 3 MainTerminal 2 − Quadrant Definitions for a Triac MT2 POSITIVE ...

Page 4

... INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) T Figure 3. On−State Characteristics −50 − JUNCTION TEMPERATURE ( C) J Figure 5. Typical Gate Trigger Current versus Junction Temperature MAC4DCM, MAC4DCN 6.0 5 CONDUCTION ANGLE 90 3.0 2.0 120 1.0 180 dc 0 3.0 3.5 4.0 0 Figure 2. On−State Power Dissipation 1.0 = 125 C J 0.1 ...

Page 5

... Gate−MT1 Resistance, MT2(+) 100 C 8 6.0 K 110 C 4.0 K 125 C 2 400 500 600 V , PEAK VOLTAGE (VOLTS) PK Figure 11. Exponential Static dv/dt versus Peak Voltage, MT2(+) MAC4DCM, MAC4DCN 120 100 100 125 −50 −25 Figure 8. Typical Latching Current versus 125 C ...

Page 6

... RMS ADJUST FOR CHARGE TRIGGER CONTROL CHARGE NON-POLAR Note: Component values are for verification of rated (di/dt) Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) MAC4DCM, MAC4DCN GATE OPEN 8.0 K 600 V 6.0 K 800 V 4.0 K 2.0 K ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MAC4DCM, MAC4DCN PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 8

... Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MAC4DCM, MAC4DCN PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B ...

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