ss8061 Silicon Standard Corporation, ss8061 Datasheet - Page 2

• Manufacturer Part Number: ss8061
• Description: 1a Low Dropout Regulator With Enable
• Manufacturer: Silicon Standard Corporation

1/21/2005 Rev.2.01
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Input Voltage……………………………………………..7V
V
Power Dissipation Internally Limited
Maximum Junction Temperature…………………150°C
Storage Temperature Range……..-65°C ≤T
Reflow Temperature (soldering, 10sec)……..….260°C
Thermal Resistance Junction to Ambient…..…177°C/W
Thermal Resistance Junction to Case………..…52°C/W
ESD Rating (Human Body Model)…………..………2kV
V
Supply Voltage
Output Voltage
Line Regulation
Load Regulation
Quiescent Current
Ripple Rejection
Dropout Voltage
Short Circuit Current
Over Temperature
V
V
V
ADJ Reference Voltage
ADJ Pin Threshold
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Conditions
Note 2: The maximum power dissipation is a function of the maximum junction temperature, T
Note3: Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
Note4: The type of output capacitor should be tantalum or aluminum.
Definitions
Dropout Voltage
The input/output Voltage differential at which the regula-
tor output no longer maintains regulation against further
reductions in input voltage. Measured when the output
drops 2% below its nominal value, dropout voltage is
affected by junction temperature, load current and mini-
mum input supply requirements.
Line Regulation
The change in output voltage for a change in input voltage.
The measurement is made under conditions of low dissi-
pation or by using pulse techniques such that average chip
temperature is not significantly affected.
EN
EN
EN
EN
EN
=V
Voltage High
Voltage Low
Bias Current Low
Voltage…………..…………………………..V
PARAMETER
IN
, V
are conditions under which the device functions but the specifications might not be guaranteed. For guaranteed
specifications and test conditions see the Electrical Characteristics.
tance, θ
is (T
thermal shutdown.
IN
=5V, I
jmax
-T
JA
, and ambient temperature T
A
O
) / θ
= 0.5A, C
JA
. If this dissipation is exceeded, the die temperature will rise above 150°C and IC will go into
SYMBOL
V
V
V
I
V
V
IN
V
ENL
I
ENH
ENL
REF
Q
IN
O
D
= 4.7µF, C
fi=120Hz, 1V
V
V
10mA < I
V
V
I
Output Active
Output Disabled
V
V
O
www.SiliconStandard.com
IN
O
IN
IN
EN
IN
=1A
+0.7V < V
=V
=3.3V,V
=3.3V,V
=2.2V, V
=0.4V
OUT
O
J
+0.7V, I
A
O
≤ +150°C
=10µF, T
. The maximum allowable power dissipation at any ambient temperature
< 1A
(Note 2)
EN
EN
ADJ
IN
IN
P-P
=V
=0V
+0.3V
=V
< 5.5V, I
O
, I
IN
=10mA
CONDITION
O
OUT
=100mA
A
, I
= T
O
O
=10mA
=10mA
Load Regulation
The change in output voltage for a change in load cur-
rent at constant chip temperature. The measurement is
made under conditions of low dissipation or by using
pulse techniques such that average chip temperature is
not significantly affected.
Maximum Power Dissipation
The maximum total device dissipation for which the
regulator will operate within specifications.
Quiescent Bias Current
Current which is used to operate the regulator chip and is
not delivered to the load.
J
OPERATING CONDITIONS
= 25°C unless otherwise specified (Note 3)
Temperature Range………….………-40°C ≤T
Input Voltage………………………………….2.2V ~5.5V
1.188
MIN
2.2
1.6
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-2
TYP
150
Jmax
0.2
0.8
1.7
0.4
0.8
1.2
0.2
V
16
55
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O
; total thermal resis-
MAX
1.212
5.5
2.5
0.6
0.4
35
20
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2
2
2
SS8061G
(note 1)
A
UNIT
mA
µA
µA
dB
°C
≤ +85°C
%
%
%
V
V
A
V
V
V
V
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