bap70-02-n NXP Semiconductors, bap70-02-n Datasheet - Page 2

• Manufacturer Part Number: bap70-02-n
• Description: Bap70-02 Silicon Pin Diode
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Planar PIN diode in a SOD523 ultra small SMD plastic
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
T
V
I
P
T
T
V
I
C
r
L
j
SYMBOL
F
SYMBOL
R
D
L
S
High voltage, current controlled RF resistor for
attenuators
Low diode capacitance
Very low series inductance.
RF attenuators
(SAT)TV
Car radio.
stg
j
R
tot
= 25 C unless otherwise specified.
F
Silicon PIN diode
d
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
forward voltage
reverse leakage current
diode capacitance
diode forward resistance
charge carrier life time
series inductance
PARAMETER
PARAMETER
Rev. 05 - 2 January 2008
T
I
V
V
V
V
V
I
I
I
I
when switched from I
I
measured at I
I
F
F
F
F
F
R
F
s
R
R
R
R
R
= 50 mA
= 0.5 mA; f = 100 MHz
= 1 mA; f = 100 MHz
= 10 mA; f = 100 MHz
= 100 mA; f = 100 MHz
= 100 mA; f = 100 MHz
= 6 mA; R
= 90 C
= 50 V
= 0 V; f = 1 MHz
= 1 V; f = 1 MHz
= 5 V; f = 1 MHz
= 20 V; f = 1 MHz
CONDITIONS
PINNING
handbook, halfpage
CONDITIONS
L
R
Marking code: K8.
= 100 ;
= 3 mA
Fig.1 Simplified outline (SOD523) and symbol.
F
= 10 mA to
PIN

1
2
1
T op view
0.9
570
400
270
200
77
40
5.4
1.4
1.25
0.6
TYP.
2
cathode
anode
65
65
MIN.
MAM405
Product specification
DESCRIPTION
1.1
100
250
100
50
7
1.9
MAX.
50
100
415
+150
+150
BAP70-02
MAX.
V
nA
fF
fF
fF
fF
nH
2 of 6
V
mA
mW
s
C
C
UNIT
UNIT