bap51-04w-n NXP Semiconductors, bap51-04w-n Datasheet - Page 4

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bap51-04w-n

Manufacturer Part Number
bap51-04w-n
Description
Bap51-04w General Purpose Pin Diode
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
GRAPHICAL DATA
2002 Feb 19
handbook, halfpage
handbook, halfpage
General purpose PIN diode
f = 100 MHz; T
Fig.2
(1) I
(2) I
(3) I
Diode inserted in series with a 50 Ω stripline circuit and biased via the
analyzer Tee network. T
Fig.4
|S 21 |
(dB)
−0.5
−2.5
−1.5
(Ω)
10
r D
10
−2
−1
F
F
F
10
2
−1
0
10
1
2
= 10 mA.
= 1 mA
= 0.5 mA
0.5
−1
Forward resistance as a function of forward
current; typical values.
Insertion loss (|s
function of frequency; typical values.
j
= 25 ° C.
1
amb
1
(1)
1.5
= 25 ° C.
(2)
21
|
2
(3)
) of the diode as a
2
10
2.5
I F (mA)
f (GHz)
MGS659
MLD507
10
3
2
4
handbook, halfpage
handbook, halfpage
f = 100 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
T
Fig.5
s 21
amb
(dB)
(fF)
500
C d
400
300
200
100
−10
−20
−30
−40
−50
= 25 ° C.
2
0
0
0.5
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation (|s
frequency; typical values.
j
= 25 ° C.
4
1
21
|
1.5
2
8
) of the diode as a function of
12
2
Preliminary specification
BAP51-04W
2.5
16
V R (V)
f (GHz)
MLD508
MLD509
20
3

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