t1200ea45e westcode, t1200ea45e Datasheet - Page 2

• Manufacturer Part Number: t1200ea45e
• Description: Insulated Gate Bi-polar Transistor
• Manufacturer: westcode

V
V
r
V
I
I
C
t
t
Q
E
t
t
Q
E
R
F
W
CES
GES
d(on)
r
d(off)
f
T
(I)
CE(sat)
T0
GE
on
off
ies
thJK
g(on)
g(off)
t
(TH
)
WESTCODE
WESTCODE
Characteristics
IGBT Characteristics
Thermal Characteristics
Notes:-
1)
2)
Provisional Data Sheet T1200EA45E Issue 3
WESTCODE
WESTCODE
PARAMETER
Collector – emitter saturation voltage
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
PARAMETER
Thermal resistance junction to sink, IGBT
Mounting force
Weight
Unless otherwise indicated T
For other clamp forces, please consult factory
An
IXYS Company
j
=125
°
C
MIN
MIN
4.7
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Page 2 of 7
TYP
TYP
200
3.5
4.7
5.5
1.7
2.8
3.2
1.4
1.7
3.8
1.2
14
30
-
-
-
-
-
-
-
-
MAX
MAX
±200
120
140
3.8
5.0
1.8
1.6
6.4
25
14
25
35
9
-
-
-
-
-
-
-
-
Insulated Gate Bi-polar Transistor Type T1200EA45E
TEST CONDITIONS
I
I
Current range: 400 – 1200A
V
V
V
V
I
V
R
R
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
C
C
C
CE
CE
GE
CE
GE
g(ON)
g(OFF)
=1200A, V
= 1200A, V
=1200A, V
= V
= ±20V
= V
= 25V, V
= ±20V,
= 3.3.Ω,
=2Ω,
GE
CES
, I
, V
C
GE
CE
= 200mA
GE
GE
GE
= 15V, T
= 0.5V
= 0V, f = 1MHz
= 15V
= 0V
CES
j
= 25°C
,
November, 2005
UNITS
UNITS
K/kW
K/kW
K/kW
mΩ
mA
µC
µC
µA
nF
kN
µs
µs
µs
µs
kg
V
V
V
V
J
J