ds3906ut-r Maxim Integrated Products, Inc., ds3906ut-r Datasheet - Page 8

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ds3906ut-r

Manufacturer Part Number
ds3906ut-r
Description
Ds3906 Triple Nv Low Step Size Variable Resistor Plus Memory
Manufacturer
Maxim Integrated Products, Inc.
Datasheet
Triple NV Low Step Size Variable
Resistor Plus Memory
makes the corresponding resistor go High-Z. Plots for
both resistor sizes are shown on the front page of this
data sheet. It can be seen that, when an external resis-
tor is connected in parallel with the DS3906’s resistors,
the effective resistance is linear and capable of achiev-
ing sub-ohm and ohm steps.
The resistor settings are stored in EEPROM memory. It
is important to point out that the DS3906 EEPROM is
organized in 2-byte pages. This is transparent when
Table 1. DS3906 Memory Map
Table 2. DS3906 Resistor Registers
* Writing a value greater than 3Fh to any of the resistor registers makes the corresponding resistor go High-Z. Position 3Fh is the
maximum position.
8
00h to 0Fh
F8h
F9h
FAh
FBh-FFh
ADDRESS
_____________________________________________________________________
ADDRESS
F8h
F9h
FAh
EEPROM
EEPROM
EEPROM
EEPROM
TYPE
VARIABLE RESISTOR
Resistor 0
Resistor 1
Resistor 2
User memory
Resistor 0
Resistor 1
Resistor 2
NAME
16 bytes of general-purpose user EEPROM.
Resistor 0-2 settings. See Table 2 and the Resistor
Registers/Settings section.
POSITION 3FH RESISTANCE
reading from the device or when performing single byte
writes. However, this limits the maximum number of
bytes that can be written in one I
Furthermore, the multiple byte writes must begin on
even memory addresses (00h, 02h, …., F8h, etc).
Additional information is provided later in the I
Communication section . Example communication
transactions are provided in Figure 3.
Reserved
(kΩ)
2.54
2.54
1.45
FUNCTION
NUMBER OF POSITIONS*
64 (00h to 3Fh) + High-Z
2
C transaction to two.
FACTORY
DEFAULT
00h
3Fh
3Fh
3Fh
2
C

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