SST29EE010 Silicon Storage Technology, Inc., SST29EE010 Datasheet
SST29EE010
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SST29EE010 Summary of contents
Page 1
... Mbit (128K x8) Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • ...
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... Write cycle. During the Erase operation, the only valid read is Toggle Bit. See Table 4 for the load sequence, Figure 11 for timing diagram, and Figure 20 for the flowchart Mbit Page-Write EEPROM SST29EE010 / SST29VE010 through A . Any byte 7 16 S71061-12-000 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Write Operation Status Detection The SST29EE/VE010 provide two software means to detect the completion of a Write cycle, in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling (DQ (DQ ). The End-of-Write detection mode is enabled after ...
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... See Table 4 for software command codes, Figure 13 for timing waveform, and Figure 19 for a flowchart. X-Decoder Y-Decoder and Page Latches Control Logic I/O Buffers and Data Latches 4 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Address Data 0000H BFH 0001H 07H 0001H 08H T1 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 FIGURE 2: Pin Assignments for 32-lead PLCC A11 A13 4 A14 WE A16 10 A15 11 A12 FIGURE 3: Pin Assignments for 32-lead TSOP FIGURE 4: Pin Assignments for 32-pin PDIP ©2008 Silicon Storage Technology, Inc. ...
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... X can but no other value Device ID = 07H for SST29EE010 and 08H for SST29VE010 ©2008 Silicon Storage Technology, Inc. Functions To provide memory addresses. Row addresses define a page for a Write cycle. Column Addresses are toggled to load page data To output data during Read cycles and receive input data during Write cycles. ...
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... SST Manufacturer’ BFH, is read with SST29EE010 Device ID = 07H, is read with A SST29VE010 Device ID = 08H, is read with A 6. Alternate six-byte Software Product ID command code Note: This product supports both the JEDEC standard three-byte command code sequence and SST’s original six-byte command code sequence. For new designs, SST recommends that the three-byte command code sequence be used. © ...
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... C capable in both non-Pb and with-Pb solder versions. ° C for 10 seconds; please consult the factory for the latest information 4.5-5.5V 4.5-5. 2.7-3.6V 2.7-3.6V = 100 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 +0.5V DD +2.0V DD S71061-12-000 05/08 ...
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... Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage OL V Output High Voltage OH ©2008 Silicon Storage Technology, Inc. = 4.5-5.5V for SST29EE010 DD Limits Min Max Units Test Conditions Address input Max CE#=OE#= ...
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... T Data Retention Latch Up LTH 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2008 Silicon Storage Technology, Inc. 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Minimum 100 5 Test Condition I Minimum Specification ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 AC CHARACTERISTICS TABLE 10: Read Cycle Timing Parameters for SST29EE010 Symbol Parameter T Read Cycle Time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time CE# Low to Active Output CLZ 1 T OE# Low to Active Output ...
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... Software ID Access and Exit Time IDA T Software Chip-Erase SCE 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2008 Silicon Storage Technology, Inc. 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE010 SST29LE/VE010 Min Max Min 10 0 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 ADDRESS A 16-0 CE# OE WE# HIGH-Z DQ 7-0 FIGURE 5: Read Cycle Timing Diagram Three-Byte Sequence for Enabling SDP 5555 2AAA 5555 ADDRESS A 16-0 CE# OE# WE 7-0 SW0 SW1 SW2 FIGURE 6: WE# Controlled Page-Write Cycle Timing Diagram ©2008 Silicon Storage Technology, Inc. ...
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... Silicon Storage Technology, Inc BLC T T OES OEH DATA VALID BYTE 0 BYTE OEH BLCO 14 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 T BLCO T WC BYTE 127 1061 F06.0 T OES D D# 1061 F07.0 S71061-12-000 05/08 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 ADDRESS A 16-0 CE# T OEH OE# WE FIGURE 9: Toggle Bit Timing Diagram 5555 2AAA ADDRESS A 14 7-0 CE# OE WE# SW0 FIGURE 10: Software Data Protect Disable Timing Diagram ©2008 Silicon Storage Technology, Inc BLCO Six-Byte Sequence for Disabling ...
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... T BLC SW1 SW2 SW3 SW4 5555 0000 IDA T BLC DEVICE ID = 07H for SST29EE010 SW1 SW2 = 08H for SST29VE010 16 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 T SCE 5555 10 T BLCO SW5 1061 F10.0 0001 DEVICE ID 1061 F11.1 S71061-12-000 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Three-Byte Sequence for Software ID Exit and Reset 5555 ADDRESS A 14 7-0 CE# OE WE# SW0 FIGURE 13: Software ID Exit and Reset ©2008 Silicon Storage Technology, Inc. 2AAA 5555 IDA T BLC SW1 SW2 17 Data Sheet 1061 F12.0 S71061-12-000 ...
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... REFERENCE POINTS (0.4 V) for a logic “0”. Measurement reference points for ILT (0.8 V). Input rise and fall times (10 TESTER LOW 18 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 OUTPUT 1061 F13.0 ↔ 90%) are <10 ns. Note Test HT HIGH Test LT LOW ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 See Figure 18 FIGURE 16: Write Algorithm ©2008 Silicon Storage Technology, Inc. Start Software Data Protect Write Command Set Page Address Set Byte Address = 0 Load Byte Data Increment Byte Address By 1 Byte No Address = 128? Yes Wait T BLCO Wait for end of ...
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... Page-Write Initiated Read a byte from page Read same byte No Does DQ 6 match? Yes Write Completed 20 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Data# Polling Page-Write Initiated Read DQ 7 (Data for last byte loaded true data? Yes Write Completed 1061 F16.0 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Software Data Protect Enable Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: A0H Address: 5555H Load 0 to 128 Bytes of page data Wait T BLCO Wait T WC SDP Enabled FIGURE 18: Software Data Protection Flowcharts © ...
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... Write data: 90H Address: 5555H Pause 10 µs Read Software ID FIGURE 19: Software Product Command Flowcharts ©2008 Silicon Storage Technology, Inc. 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Software Product ID Exit & Reset Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 FIGURE 20: Software Chip-Erase Command Codes ©2008 Silicon Storage Technology, Inc. Software Chip-Erase Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: 80H Address: 5555H Write data: AAH Address: 5555H Write data: 55H ...
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... Device Density 010 = 1 Mbit Function E = Page-Write Voltage E = 4.5-5. 2.7-3.6V Product Series 29 = Page-Write Flash 1. Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are “RoHS Compliant” Mbit Page-Write EEPROM SST29EE010 / SST29VE010 S71061-12-000 05/08 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Valid combinations for SST29EE010 SST29EE010-70-4C-NHE SST29EE010-70-4C-WHE SST29EE010-90-4C-NHE SST29EE010-90-4C-WHE SST29EE010-70-4I-NHE SST29EE010-70-4I-WHE Valid combinations for SST29VE010 SST29VE010-150-4C-NHE SST29VE010-150-4C-WHE SST29VE010-150-4C-EHE SST29VE010-200-4C-NHE SST29VE010-200-4C-WHE SST29VE010-200-4C-EHE SST29VE010-150-4I-NHE Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations ...
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... All linear dimensions are in inches (max/min). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches. 4. Coplanarity: 4 mils. FIGURE 21: 32-lead Plastic Lead Chip Carrier (PLCC) SST Package Code: NH ©2008 Silicon Storage Technology, Inc. 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 SIDE VIEW .112 .106 .029 .040 .020 R. ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Pin # 1 Identifier 12.50 12.30 0.70 0.50 14.20 13.80 Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0 Maximum allowable mold flash is 0. the package ends, and 0.25 mm between leads. FIGURE 22: 32-lead Thin Small Outline Package (TSOP) 8mm x 14mm SST Package Code: WH © ...
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... FIGURE 23: 32-lead Thin Small Outline Package (TSOP) 8mm x 20mm SST Package Code: EH ©2008 Silicon Storage Technology, Inc. 18.50 18.30 20.20 19. Mbit Page-Write EEPROM SST29EE010 / SST29VE010 1.05 0.95 0.50 BSC 8.10 0.27 7.90 0.17 0.15 0.05 DETAIL 1 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Pin #1 Identifier .075 .065 Base Plane Seating Plane .050 .015 .080 .065 .070 .045 Note: 1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (max/min). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches. ...
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... Updated the solder reflow temperature to the “Absolute Maximum Stress Ratings” on page 8. 12 • Updated “Valid combinations for SST29EE010” and “Valid combinations for SST29VE010” on page 25 to remove unused parts. • EOl’ed all Pb devices: refer to EOL Data Sheet S71601(03). ...