sth200n55f3-2 STMicroelectronics, sth200n55f3-2 Datasheet - Page 4

• Manufacturer Part Number: sth200n55f3-2
• Description: N-channel 55 V, 1.8 M?, 160 A, H2pak Stripfet? Iii Power Mosfet
• Manufacturer: STMicroelectronics

Electrical characteristics
2
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Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
case
R
V
(BR)DSS
C
I
I
C
DS(on)
C
Q
GS(th)
Q
GSS
DSS
Q
oss
iss
rss
gs
gd
g
= 25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 16085 Rev 1
V
V
V
Figure 3
I
V
V
V
V
D
DS
DD
GS
DS
DS
DS
DS
GS
= 250 µA, V
= 10 V
= Max rating,
= Max rating, T
= ± 20 V
= V
= 10 V, I
= 25 V, f = 1 MHz, V
= 44 V, I
Test conditions
Test conditions
GS
, I
D
D
D
= 250 µA
GS
= 60 A
= 120 A,
= 0
c
= 125 °C
GS
=0
Min.
Min.
55
2
-
-
6800
1450
Typ.
Typ.
100
1.8
15
30
26
STH200N55F3-2
Max.
±100
Max.
2.6
10
1
4
-
-
Unit
Unit
mΩ
nC
nC
nC
µA
µA
nA
pF
pF
pF
V
V