4n256s-ta1 LiteOn Technology Corp., 4n256s-ta1 Datasheet - Page 9

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4n256s-ta1

Manufacturer Part Number
4n256s-ta1
Description
Photocouplers Phototransistor Output Dip6 4n25m-v
Manufacturer
LiteOn Technology Corp.
Datasheet
BNS-OD-C131/A4
Part No. : 4N25/4N26 (M, S, S-TA1)-V
PARTIAL DISCHARGE TEST METHOD
The partial discharge level shall not exceed 5 pC during the partial discharge measuring time
interval t
Method (A) for type testing and random testing.
Method (B) for routine testing.
V
t1
V
V
p
t
INTIAL
ini
under the test conditions shown above.
t3
t2
t3
L I T E - O N T E C H N O L O G Y C O R P O R A T I O N
V
tb
tp
pr
V
pr
tp
tb
Property of LITE-ON Only
t4
V
IORM
t
t4
V
IORM
t
t1, t2
t3, t4
tp (Partial Discharge Measuring Time)= 60s
tb
tini
t3, t4
tp (Partial Discharge Measuring Time)= 1s
tb
Page : 9
= 1 to 10s
= 1s
= 62s
= 0.1s
= 1.2s
= 10s
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