h11526-110-nn Hamamatsu Photonics, K.K.,, h11526-110-nn Datasheet - Page 2

• Manufacturer Part Number: h11526-110-nn
• Description: Pmt Module With Gate Function
• Manufacturer: Hamamatsu Photonics, K.K.,

*4: Load resistance = 50 Ω (peak to peak)
*5: Cable RG-174/U, Cable length 450 mm, Load resistance = 1 MΩ, Load capacitance = 22 pF
*6: The time required for the output to reach a stable level following a change in the control voltage from +0.8 V to +0.4 V
*7: No condensation
Suffix
Gate Mode
Gate Signal
Input
Ripple Noise *
Settling Time *
Operating Ambient Temperature *
Storage Temperature *
Weight
Characteristics
1000
100
0.1
10
1
200
TPMOB0232EA
300
400
Mode
Gate Width (FWHM)
Rise Time
Fall Time
Repetition Rate
Switching Ratio
Switching Noise *
Delay Time
Gate Jitter
Level
Input Impedance
Pulse Width
1
6
WAVELENGTH (nm)
*
Parameter
5
500
(peak to peak)
600
7
-110
700
800
(Cathode radiant sensitivity, Gain)
4
900
7
Max.
Max.
Max.
Max.
Max.
Max.
1000
1000
100
0.1
10
-110-NN / -01-NN / -20-NN
1
200
TPMOB0225EA
300
Normally ON
400
WAVELENGTH (nm)
70
80
500
8
C-MOS (High level: +3.5 V to +5 V)
600
-01
700
H11526 Series
800
100 ns to DC
20 ns to DC
-20
-20 to +50
+5 to +45
900
105
10
10
30
10
1
5
2
1000
6
-110-NF / -01-NF / -20-NF
Normally OFF
10
10
10
10
10
7
6
5
4
3
0.3
TPMOB0234EA
180
70
8
0.4
CONTROL VOLTAGE (V)
0.5
0.6
0.7
0.8
Unit
kHz
mV
mV
kΩ
ns
ns
ns
ns
°C
°C
—
—
—
—
—
—
g
s
0.9
1.0