ir333c-h0-l10 Everlight Electronics Co., Ltd., ir333c-h0-l10 Datasheet

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... RoHS compliant version. Descriptions ․EVERLIGHT’S Infrared Emitting Diode(IR333C/H0/L10 high intensity diode , molded in a water clear plastic package. ․The device is spectrally matched with phototransistor , photodiode and infrared receiver module. ...

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... Everlight Electronics Co., Ltd. Device No：DIR-033-087 Symbol Rating I 100 -40 ~ +85 opr T -40 ~ +85 stg T 260 sol P 150 d http:\\www.everlight.com Prepared date：07-20-2005 IR333C/H0/L10 Units ℃ ℃ ℃ mW Rev 3 Page Prepared by：Jaine Tsai ...

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... F I =20mA F I =20mA F I =100mA F Pulse Width≦100μs ,Duty≦1% I =1A F Pulse Width≦100μs ,Duty≦1 =20mA 7.80 11.0 12.5 17.6 http:\\www.everlight.com Prepared date：07-20-2005 IR333C/H0/L10 Min. Typ. Max. Units 7 mW/sr -- 450 -- -- nm -- 940 1.2 1.5 -- 1.4 1 ...

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... Everlight Electronics Co., Ltd. Device No：DIR-033-087 Fig.2 Spectral Distribution 100 Fig.4 Forward Current vs. Forward Voltage 50 75 100 http:\\www.everlight.com Prepared date：07-20-2005 IR333C/H0/L10 100 Rev 3 Prepared by：Jaine Tsai ...

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... Fig.7 Relative Intensity vs. Ambient Temperature(° Everlight Electronics Co., Ltd. Device No：DIR-033-087 =20mA F 100 120 http:\\www.everlight.com Prepared date：07-20-2005 IR333C/H0/L10 Fig.6 Relative Radiant Intensity vs. Angular Displacement - -10 1.0 0.9 0.8 0.7 0.6 0.4 0.2 0 0.2 0.4 0.6 Fig.8 Forward Voltage vs. Ambient Temperature(°C) 1.3 1.2 I =20mA F 1.1 1 ...

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... Prepared date：07-20-2005 IR333C/H0/L10 Failure Ac/Re Judgement Criteria 0/1 ≧U×2 I 0/1 R Ee≦L×0.8 ≧U×1 0/1 U：Upper Specification Limit 0/1 L： ...

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... Office: No 25, Lane 76, Sec 3, Chung Yang Rd, Tucheng, Taipei 236, Taiwan, R.O.C Everlight Electronics Co., Ltd. Device No：DIR-033-087 RoHS http:\\www.everlight.com Prepared date：07-20-2005 IR333C/H0/L10 CPN: Customer’s Production Number P/N : Production Number QTY: Packing Quantity AT: Ranks HUE: Peak Wavelength REF: Reference LOT No: Lot Number ...