bd139-6 New Continental Device India Limited, bd139-6 Datasheet - Page 2
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bd139-6
Manufacturer Part Number
bd139-6
Description
Npn Epitaxial Silicon Power Transistors
Manufacturer
New Continental Device India Limited
Datasheet
1.BD139-6.pdf
(4 pages)
NPN EPITAXIAL SILICON POWER TRANSISTORS
ELECTRICAL CHARACTERISTICS (T
DESCRIPTION
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter On Voltage
*Pulse test:- Pulse width=300 s, duty cycle=2%
E
C
B
Continental Device India Limited
c
=25ºC unless specified otherwise)
*h
SYMBOL
*V
FE
*V
CE (sat)
Group
BE(on)
Data Sheet
TEST CONDITION
I
I
C
*I
C
=0.15A, V
=0.5A, I
C
=0.5A, V
- 10
- 16
- 25
- 6
B
=0.05A
CE
CE
=2V
=2V
MIN
100
160
40
63
BD135 BD137
BD139
TO126
Plastic Package
MAX
100
160
250
400
0.5
1.0
Page 2 of 4
UNIT
V
V