bub323 ON Semiconductor, bub323 Datasheet - Page 4

• Manufacturer Part Number: bub323
• Description: Npn Silicon Power Darlington
• Manufacturer: ON Semiconductor

(b)
(d)
(a)
(c)
Figure 4. Energy Test Criteria for BU323Z
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BUB323Z
vice can sustain, under given DC biases (I
R
gram, Figure 2. .
load and I
the shaded area and greater than the V
Figure 4. a.
(minimum limit) at any point along the V
shown on Figures 4. b, and 4. c. This assures that hot spots
and uncontrolled avalanche are not being generated in the
die, and the transistor is not damaged, thus enabling the sus-
tained energy level required.
voltage is less than the V
4
BE
The shaded area represents the amount of energy the de-
The transistor PASSES the Energy test if, for the inductive
The transistor FAILS if the V
The transistor FAILS if its Collector/Emitter breakdown
), without an external clamp; see the test schematic dia-
CPEAK
/I
B
/V
BE(off)
GATE
biases, the V
value, Figure 4. d.
CE
is less than the V
GATE
CE
minimum limit,
remains outside
CE
C
/I
/I
C
B
/V
curve as
BE(off)
GATE
/