bcw33l ON Semiconductor, bcw33l Datasheet - Page 5

• Manufacturer Part Number: bcw33l
• Description: Small Signal Npn Transistor
• Manufacturer: ON Semiconductor

10
10
500
300
200
100
10
10
10
10
10
70
50
0.07
0.05
0.03
0.02
0.01
−1
−2
1.0
0.7
0.5
0.3
0.2
0.1
4
3
2
1
0
0.5
− 4
0
0.01
Figure 14. Current−Gain — Bandwidth Product
T
f = 100 MHz
J
V
0.7 1.0
= 25°C
CC
− 2
0
0.02
= 30 Vdc
D = 0.5
0.01
0.05
0.02
0
0.2
0.1
0.05
T
J
I
C
, JUNCTION TEMPERATURE (°C)
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
2.0
, COLLECTOR CURRENT (mA)
V
CE
0.1
= 20 V
3.0
Figure 16A.
0.2
5.0 V
SINGLE PULSE
5.0 7.0
I
CEO
0.5
I
TYPICAL DYNAMIC CHARACTERISTICS
CEX
10
1.0
@ V
BE(off)
2.0
AND
I
CBO
20
Figure 16. Thermal Response
= 3.0 Vdc
5.0
http://onsemi.com
30
BCW33LT1
10
50
t, TIME (ms)
5
20
as shown in Figure 16A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 16 was calculated for various duty cycles.
steady state value R
Example:
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
For more information, see AN−569.
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
To find Z
t
DT = r(t) x P
1
= 1.0 ms, t
7.0
5.0
3.0
2.0
1.0
10
50
0.05
qJA(t)
100 200
P
0.1
(pk)
(pk)
2
, multiply the value obtained from Figure 16 by the
= 5.0 ms. (D = 0.2)
x R
0.2
qJA
FIGURE 19A
t
qJA
1
V
Figure 15. Capacitance
.
R
500 1.0 k 2.0 k
t
, REVERSE VOLTAGE (VOLTS)
2
= 0.22 x 2.0 x 200 = 88°C.
0.5
1.0
DUTY CYCLE, D = t
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
Z
T
C
qJA(t)
J(pk)
C
2.0
ib
ob
− T
5.0 k 10 k 20 k 50 k 100 k
= r(t) w R
A
5.0
= P
(pk)
qJA
1
10
(SEE AN−569)
Z
qJA(t)
1
T
f = 1.0 MHz
/t
J
2
= 25°C
20
50