50a02mh Sanyo Semiconductor Corporation, 50a02mh Datasheet
50a02mh
Manufacturer Part Number
50a02mh
Description
Pnp Epitaxial Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.50A02MH.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
50a02mh-TL-E
Manufacturer:
RFMD
Quantity:
204
Ordering number : ENN7488
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : AM
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
•
•
•
•
Low-frequency Amplifier, high-speed switching,
small motor drive, muting circuit.
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
R CE (sat) typ=210m [I C =0.5A, I B =50mA].
Small ON-resistance (Ron).
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V CE (sat)
V BE (sat)
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
h FE
Cob
I CP
P C
I C
Tj
f T
General-Purpose Amplifier Applications
Mounted on a ceramic board (600mm
V CB =- -40V, I E =0
V EB =- -4V, I C =0
V CE =- -2V, I C =--10mA
V CE =- -10V, I C =--50mA
V CB =- -10V, f=1MHz
I C =--100mA, I B =--10mA
I C =--100mA, I B =--10mA
50A02MH
Conditions
Package Dimensions
unit : mm
2194A
Conditions
(Bottom view)
0.65
2
PNP Epitaxial Planar Silicon Transistor
2
2.0
0.8mm)
3
0.3
1
[50A02MH]
min
Low-Frequency
200
O3103 TS IM TA-100701
1
(Top view)
3
0.15
Ratings
typ
2
Ratings
--0.9
690
- -60
3.8
50A02MH
Continued on next page.
--55 to +150
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
max
--500
--100
--100
--120
--1.0
600
150
--1.2
--50
--50
500
--5
No.7488-1/4
MHz
Unit
mW
Unit
mA
mV
nA
nA
pF
V
V
V
A
V
C
C
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50a02mh Summary of contents
Page 1
... -4V -2V =--10mA -10V =--50mA Cob -10V, f=1MHz V CE (sat =--100mA =--10mA V BE (sat =--100mA =--10mA PNP Epitaxial Planar Silicon Transistor 50A02MH Low-Frequency [50A02MH] 0.3 0. 0.65 2.0 3 (Bottom view Base 2 : Emitter 3 : Collector 1 ...
Page 2
... Collector Current 50A02MH Symbol Conditions V (BR)CBO I C =-- (BR)CEO I C =--1mA (BR)EBO I E =-- See specified Test Circuit. t stg See specified Test Circuit See specified Test Circuit. ...
Page 3
... Collector Current 700 600 500 400 300 200 100 100 Ambient Temperature 50A02MH =20 2 --1000 --100 -- --1000 --1.0 IT05123 =20 ...
Page 4
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. 50A02MH PS No.7488-4/4 ...