unr511e Panasonic Corporation of North America, unr511e Datasheet - Page 2

• Manufacturer Part Number: unr511e
• Description: Silicon Pnp Epitaxial Planar Type
• Manufacturer: Panasonic Corporation of North America

UNR511x Series
■ Electrical Characteristics T
2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
cutoff current UNR5113
(Collector open) UNR5112/5114/511D/
Forward current UNR511V
transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
Input
resistance
Resistance
ratio
Parameter
UNR5118
UNR511N
UNR5110/5115/5116/5117
511E/511M/511N/511T
UNR511Z
UNR5111
UNR511F/511H
UNR5119
UNR5118/511L/511V
UNR5118/511L
UNR5119/511D/511F/511H
UNR5111
UNR5112/511E
UNR511Z
UNR5113/5114/511M
UNR511N/511T
UNR5110
UNR511V
UNR5113
UNR511D
UNR511E
UNR5116
UNR5119
UNR511H/511M/511V
UNR5116/511F/511L
511N/511Z
UNR5111/5114/5115
UNR5112/5117/511T
UNR5110/5113/511D/511E
UNR511M
UNR5118/5119
UNR511Z
*
/5115
*
/5116
*
/5117
a
*
= 25°C ± 3°C
Symbol
V
R
V
V
I
I
I
V
V
CE(sat)
h
CBO
CEO
EBO
R
1
f
CBO
CEO
FE
OH
OL
/R
T
1
2
I
I
V
V
V
V
I
I
V
V
V
V
V
V
V
C
C
C
C
CB
CB
CB
CE
EB
CE
CC
CC
CC
CC
CC
= −10 µA, I
= −2 mA, I
= −10 mA, I
= −10 mA, I
SJH00022BED
= −10 V, I
= −10 V, I
= −50 V, I
= −6 V, I
= −10 V, I
= −5 V, V
= −50 V, I
= −5 V, V
= −5 V, V
= −5 V, V
= −5 V, V
Conditions
B
C
E
E
E
B
B
B
B
B
B
B
B
C
E
= 0
= 0
= 1 mA, f = 200 MHz
= 2 mA, f = 200 MHz
= 0
= − 0.5 V, R
= −2.5 V, R
= −3.5 V, R
= −10 V, R
= −6 V, R
= 0
= 0
= −5 mA
= − 0.3 mA
= −1.5 mA
L
L
= 1 kΩ
L
L
L
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
−30%
−4.9
0.08
Min
−50
−50
160
20
30
35
60
60
80
80
6
0.047
0.51
0.10
0.21
Typ
150
1.0
2.2
4.7
0.1
80
10
22
47
− 0.01
− 0.25
+30%
− 0.1
− 0.5
− 0.1
− 0.2
− 0.4
− 0.5
− 0.2
Max
−1.0
−1.5
−2.0
0.12
200
400
460
20
MHz
Unit
mA
µA
µA
kΩ


V
V
V
V
V