unr32at Panasonic Corporation of North America, unr32at Datasheet
unr32at
Manufacturer Part Number
unr32at
Description
Silicon Npn Eqitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR32AT.pdf
(3 pages)
Transistors with built-in Resistor
UNR32AT
Silicon NPN epitaxial planar type
For digital circuits
Features
Features
Absolute Maximum Ratings
Absolute Maximum Ratings
Electrical Characteristics
Electrical Characteristics
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2005
Suitable for high-density mounting and downsizing of the equipment
Suitable for high-density mounting and downsizing of the equipment
Contribute to low power consumption
Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
T
a
a
a
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25
= 25
T
a
a
a
= 25
= 25
°C±3°C
Symbol
V
V
T
T
T
°C
P
I
T
T
T
CBO
CEO
Symbol
stg
stg
C
V
R
T
j
j
V
V
I
I
I
V
V
1
h
h
h
CE(sat)
CBO
CEO
EBO
R
f
f
f
CBO
CEO
FE
FE
OH
OL
/ R
/ R
/ R
T
T
1
2
2
–55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
C
C
C
C
C
C
100
125
CB
CE
CE
CE
EB
CE
CE
CE
CC
CC
CC
CC
CC
CC
CB
50
50
80
= 10
= 10
= 2 mA, I
= 2 mA, I
= 10 mA, I
= 10 mA, I
= 50 V, I
= 50 V, I
= 50 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V = 0.5 V, R
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V = 2.5 V, R
= 10 V, I
SJH00109BED
µA, I
C
C
C
B
E
E
E
B
B
B
B
B
C
C
C
E
E
E
E
E
E
B
= 0
= 0
= 0
Unit
mW
Conditions
= 0
= 0
mA
= 0.5 V, R
= 0.5 V, R = 1 k
= 2.5 V, R
= 2.5 V, R = 1 k
= 0
= 0
= 0
= 5 mA
= 5 mA
= —2 mA, f = 200 MHz
= —2 mA, f = 200 MHz
°C
°C
= 0.3 mA
V
V
L
L
L
L
L
L
L
L
= 1 k
= 1 kΩ
= 1 k
= 1 k
= 1 kΩ
= 1 k
Marking Symbol: KZ
Internal Connection
Ω
Ω
1: Base
2: Emitter
3: Collecter
0.23
+0.05
–0.02
0.33
5°
+0.05
–0.02
(0.40)
—30%
3
0.80
1.20
1
Min
0.37
4.9
50
50
80
B
(0.40)
±0.05
±0.05
R
R
(47 kΩ)
2
1
2
(22 kΩ)
0.47
Typ
150
22
SSSMini3-F1 Package
+30%
Max
0.10
0.25
0.57
400
0.1
0.5
0.2
0.2
+0.05
–0.02
C
E
Unit: mm
MHz
Unit
mA
kΩ
kΩ
k
µA
µA
V
V
V
V
V
1
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unr32at Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR32AT Silicon NPN epitaxial planar type For digital circuits Features Features Suitable for high-density mounting and downsizing of the equipment Suitable for high-density mounting and downsizing of the equipment ...
Page 2
... 25° 350 µ 300 µA 250 µA 60 200 µA 150 µA 40 100 µ Collector-emitter voltage V CE UNR32AT_C - V V MHz T = 25° − Collector-base voltage V CB ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...