unrf2a3 Panasonic Corporation of North America, unrf2a3 Datasheet
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unrf2a3
Manufacturer Part Number
unrf2a3
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNRF2A3.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
unrf2a300A
Manufacturer:
FSC
Quantity:
20 400
Transistors with built-in Resistor
UNRF2A3
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2005
• Reduction of assembly cost and package size with 1006 type mold
• Maximum package height (0.4 mm) contributes to develop thinner
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
leadless package is possible
equipments
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
R
P
CBO
I
T
V
V
CEO
a
I
I
I
V
stg
V
C
1
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
= 25°C
CBO
CEO
FE
OH
OL
/ R
T
1
2
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
100
125
CB
CE
EB
CE
CC
CC
CB
50
50
80
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJH00059CED
= 50 V, I
= 6 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
Unit
B
B
B
mW
B
C
E
E
mA
= 0
= 0
°C
°C
= 0
V
V
= 5 mA
= 0.3 mA
= 0.5 V, R
= 3.5 V, R
= 0
= 0
= −2 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
Marking Symbol: 1W
Internal Connection
3
1.00
±0.05
(47 kΩ)
−30%
B
Min
4.9
0.8
50
50
80
R
R
1
2
(47 kΩ)
2
1
3
Typ
150
0.25
1.0
47
±0.05
0.65
0.39
+30%
Max
±0.01
ML3-N2 Package
0.25
0.1
0.5
0.1
0.2
1.2
0.25
+0.01
−0.03
C
E
1: Base
2: Emitter
3: Collector
±0.05
Unit: mm
1
2
0.05
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
±0.03
1
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unrf2a3 Summary of contents
Page 1
... Transistors with built-in Resistor UNRF2A3 Silicon NPN epitaxial planar type For digital circuits ■ Features • Reduction of assembly cost and package size with 1006 type mold leadless package is possible • Maximum package height (0.4 mm) contributes to develop thinner equipments ■ Absolute Maximum Ratings T ...
Page 2
... UNRF2A3 120 100 120 ( °C ) Ambient temperature T a 300 = 85°C a 25°C 250 −25°C 200 150 100 100 ( mA ) Collector current I C 100 = 0 ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...