unr8231 Panasonic Corporation of North America, unr8231 Datasheet
unr8231
Manufacturer Part Number
unr8231
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR8231.pdf
(3 pages)
Transistors with built-in Resistor
UNR8231/8231A
Silicon NPN epitaxial planar type
For switching
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2004
• High forward current transfer ratio h
• Resistor built-in type, allowing downsizing of the equipment
• Available in a type with radial taping
Note) * : Printed circuit board: Copper foil area of 1 cm
Collector-base voltage UNR8231
(Emitter open)
Collector-emitter
voltage (Base open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage UNR8231
(Emitter open)
Collector-emitter
voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input resistance
Resistance ratio
Transition frequency
and reduction of the number of parts
2. * : Pulse measurement
board thickness of 1.7 mm for the collector portion
Parameter
Parameter
*
UNR8231A
UNR8231
UNR8231A
UNR8231A
UNR8231
UNR8231A
*
*
a
Symbol
Symbol
V
= 25°C ± 3°C
R
V
V
V
V
I
I
I
T
CE(sat)
h
I
CBO
FE
P
CEO
EBO
R
1
I
T
f
CBO
CEO
CBO
CEO
a
CP
FE
/R
C
stg
T
T
1
j
= 25°C
2
−55 to +150
Rating
I
I
V
V
V
V
I
V
150
C
C
C
Note) The part numbers in the parenthesis show conventional part number.
0.7
1.5
(UN8231/8231A)
20
20
50
2
60
CB
CE
EB
CE
CB
1
= 10 µA, I
= 1 mA, I
= 500 mA, I
or more, and the
SJH00033BED
= 10 V, I
= 15 V, I
= 15 V, I
= 14 V, I
= 10 V, I
B
Conditions
Unit
E
E
°C
°C
W
B
C
C
E
V
V
A
A
= 0
= −50 mA, f = 200 MHz
= 0
B
= 0
= 0
= 0
= 150 mA
= 5 mA
Internal Connection
0.65 max.
0.45
2.5
0.7
+0.10
–0.05
±0.5
1
0.016
(4.7 kΩ)
Min
800
0.7
B
6.9
20
60
20
50
4.0
R
2
R
±0.1
1
2
(1 kΩ)
3
2.5
0.021
Typ
200
1.0
±0.5
1.05
0.025
MT-2-A1 Package
2 100
Max
0.5
0.4
1.3
±0.05
10
1
C
E
1: Emitter
2: Collector
3: Base
Unit: mm
0.45
MHz
2.5
Unit
(0.8)
mA
µA
µA
kΩ
V
V
V
+0.10
–0.05
±0.1
1
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unr8231 Summary of contents
Page 1
... Total power dissipation Junction temperature Storage temperature Note Printed circuit board: Copper foil area board thickness of 1.7 mm for the collector portion ■ Electrical Characteristics T Parameter Collector-base voltage UNR8231 (Emitter open) UNR8231A Collector-emitter UNR8231 voltage (Base open) UNR8231A Collector-base cutoff current (Emitter open) ...
Page 2
... UNR8231/8231A 1.6 2 Copper foil area of 1cm or more and thickness of 1.7mm for the collector portion. 1.2 0.8 0 120 160 ( °C ) Ambient temperature T a 400 = 000 = 75°C 1 600 T a 25°C 1 200 −25°C 800 400 0 −2 − ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...