tpd4113k TOSHIBA Semiconductor CORPORATION, tpd4113k Datasheet - Page 11

• Manufacturer Part Number: tpd4113k
• Description: Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Description of Protection Function
Safe Operating Area
Note 1: The above safe operating areas are at Tj = 135°C (Figure 1) and Tc = 95°C (Figure 2). If the temperature
Note 2: The above safe operating areas include the over-current protection operation area.
(1)
(2)
(3)
0.83
0.9
0
exceeds these, the safe operation areas are reduced.
Over-current protection
0
Under-voltage protection
Thermal shutdown
This product incorporates the over-current protection circuit to protect itself against over-current at
startup or when a motor is locked. This protection function detects voltage generated in the current
detection resistor connected to the RS pin. When this voltage exceeds V
output, which is on, temporarily shuts down after a dead time , preventing any additional current
from flowing to this product. The next all “L” signal releases the shutdown state.
This product incorporates a thermal shutdown circuit to protect itself against excessive rise in
temperature.When the temperature of this chip rises to the internal setting TSD due to external
causes or internal heat generation all IGBT outputs shut down regardless of the input. This
protection function has hysteresis (ΔTSD = 50°C typ.). When the chip temperature falls to TSD −
ΔTSD, the chip is automatically restored and the IGBT is turned on/off again by the input.
Because the chip contains just one temperature-detection location, when the chip heats up due to the
IGBT, for example, the differences in distance between the detection location and the IGBT (the
source of the heat) can cause differences in the time taken for shutdown to occur. Therefore, the
temperature of the chip may rise higher than the initial thermal shutdown temperature.
This product incorporates an under-voltage protection circuit to prevent the IGBT from operating in
unsaturated mode when the V
When the V
outputs shut down regardless of the input. This protection function has hysteresis. When the
V
automatically restored and the IGBT is turned on/off again by the input.
When the V
When the V
turned on/off again by the input signal.
CC
UVR (= 11.5 V typ.) reaches 0.5 V higher than the shutdown voltage, this product is
Power supply voltage V
Figure 1 SOA at Tj = 135°C
CC
BS
BS
UVR (= 9.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IGBT is
supply voltage drops (V
power supply falls to this product internal setting (V
BB
400
(V)
CC
voltage or the V
450
BS
UVD = 9 V typ.), the high-side IGBT output shuts down.
11
BS
voltage drops.
0.9
1.0
0
0
Power supply voltage V
Figure 2 SOA at Tc = 95°C
CC
UVD = 11 V typ.), all IGBT
R
= 0.5 V (typ.), the IGBT
TPD4113K
BB
2006-11-01
400
(V)
450