lt4565- Lite-On Power Semiconductor, lt4565- Datasheet

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lt4565-

Manufacturer Part Number
lt4565-
Description
N- And P-channel 40-v Power Mosfet
Manufacturer
Lite-On Power Semiconductor
Datasheet
1.LT4565-.pdf (7 pages)
Rev 0. Nov. 2007
Nov, 2007-Ver4.0
N- and P-Channel 40-V Power MOSFET
GENERAL DESCRIPTION
The LT4565 is the N- and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density ,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
Absolute Maximum Ratings (T
*The device mounted on 1in
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(Tj=150℃)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction Temperature
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
Parameter
Top View
(SOP-8)
2
FR4 board with 2 oz copper
L=0.1mH
T
T
T
T
*
A
A
A
A
A
=25℃
=70℃
=25℃
=70℃
=25℃ Unless Otherwise Noted)
*
Symbol
V
V
R
R
E
I
I
P
T
GSS
DM
DSS
I
θJC
AS
θJA
D
AS
D
J
10 secs
2.5
1.5
6.2
4.8
50
N-Channel
FEATURES
● R
● R
● R
● R
● Super high density cell design for extremely low R
● Exceptional on-resistance and maximum DC current
APPLICATIONS
● Power Management
● DC/DC Converter
● LCD TV & Monitor Display inverter
● CCFL inverter
±16
8.5
40
25
13
49
capability
DS(ON)
DS(ON)
DS(ON)
DS(ON)
Steady State
1.56
0.94
4.9
3.8
80
≦40mΩ@V
≦45mΩ@V
≦54mΩ@V
≦60mΩ@VGS=-4.5V(P-Ch)
-55 to 150
10 secs
2.45
1.47
GS
GS
GS
-5.3
-4.1
51
=10V (N-Ch)
=4.5V (N-Ch)
=-10V (P-Ch)
P-Channel
±16
-40
25
16
13
50
Steady State
1.52
0.91
-4.2
-3.2
82
ME4565
℃/W
℃/W
Unit
mJ
W
℃
V
A
DS(ON)
01

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lt4565- Summary of contents

Page 1

... N- and P-Channel 40-V Power MOSFET GENERAL DESCRIPTION The LT4565 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone ...

Page 2

N- and P-Channel 40-V Power MOSFET Electrical Characteristics (T Symbol Parameter STATIC V Drain-Source Breakdown Voltage (BR)DSS V Gate Threshold Voltage GS(th) I Gate Leakage Current GSS I Zero Gate Voltage Drain Current DSS I On-State Drain Current D(ON) R ...

Page 3

N- and P-Channel 40-V Power MOSFET Typical Characteristics (T Rev 0. Nov. 2007 Nov, 2007-Ver4.0 =25℃ Noted) N-CHANNEL J ME4565 03 ...

Page 4

N- and P-Channel 40-V Power MOSFET Typical Characteristics (T Rev 0. Nov. 2007 Nov, 2007-Ver4.0 =25℃ Noted) N-CHANNEL J ME4565 04 ...

Page 5

N- and P-Channel 40-V Power MOSFET Typical Characteristics (T Rev 0. Nov. 2007 Nov, 2007-Ver4.0 =25℃ Noted) P-CHANNEL J ME4565 05 ...

Page 6

N- and P-Channel 40-V Power MOSFET Typical Characteristics (T Rev 0. Nov. 2007 Nov, 2007-Ver4.0 =25℃ Noted) P-CHANNEL J ME4565 06 ...

Page 7

N- and P-Channel 40-V Power MOSFET Rev 0. Nov. 2007 Nov, 2007-Ver4.0 SOP-8 Package Outline DIM θ ME4565 MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.18 0.25 4.80 ...

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