c450da1000-0225 Cree, Inc., c450da1000-0225 Datasheet
c450da1000-0225
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c450da1000-0225 Summary of contents
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Direct Attach DA1000™ LEDs CxxxDA1000-Sxx000 Data Sheet Cree’s Direct Attach DA1000 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The DA1000 LEDs are among the brightest in the lighting market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpad- down design allows for eutectic die attach and enables superior performance from improved thermal management. FEATURES • Direct Attach LED Technology • Rectangular LED RF Performance – 450 & 460 nm – 455 mW min • High Reliability - Eutectic Attach • Low Forward Voltage (Vf) – 3.15 V Typical at 350 mA • Maximum DC Forward Current – 1000 mA • ...
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... Notes 1& Forward Current Peak Forward Current (1/10 duty cycle @ 1 kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Typical Electrical/Optical Characteristics at T Part Number Forward Voltage (V Min. C450DA1000-Sxx000 2.7 C460DA1000-Sxx000 2.7 Mechanical Specifications Description P-N Junction Area (μm) Chip Bottom Area (μm) Chip Top Area (μm) Chip Thickness (μm) AuSn Bond Pad Width – Anode (um) AuSn Bond Pad Length – Anode (um) AuSn Bond Pad Width – Cathode (um) AuSn Bond Pad Length – ...
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... Standard Bins for CxxxDA1000-Sxx000 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxDA1000-Sxxxxx) orders may be filled with any or all bins (CxxxDA1000-xxxxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are 350 mA. C450DA1000-0225 625 C450DA1000-0221 585 C450DA1000-0217 550 C450DA1000-0213 515 ...
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Characteristic Curves These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs. Forward Voltage 1000 900 800 700 600 500 400 300 200 100 (V) Forward Current vs. Forward Voltage Relative Intensity vs. Forward Current Relative Light Intensity Vs Junction ...
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Radiation Pattern This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip. Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA1000 are trademarks of Cree, Inc. 5 CPR3ES Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com ...