c450da3547-0213 Cree, Inc., c450da3547-0213 Datasheet - Page 2

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c450da3547-0213

Manufacturer Part Number
c450da3547-0213
Description
Manufacturer
Cree, Inc.
Datasheet
Notes:
1. Maximum ratings are package-dependent. The above ratings were determined using a chip sub-mount on MCPCB (with silicone
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA350 are trademarks of Cree, Inc.
2
Maximum Ratings at T
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Electrostatic Discharge Classification (MIL-STD-883E)
Typical Electrical/Optical Characteristics at T
Part Number
C450DA3547-Sxx00
C460DA3547-Sxx00
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Bottom Area (μm)
Chip Top Area (μm)
Chip Thickness (μm)
AuSn Bond Pad Width – Anode (um)
AuSn Bond Pad Length – Anode (um)
AuSn Bond Pad Width – Cathode (um)
AuSn Bond Pad Length – Cathode (um)
Bond Pad Gap (μm)
AuSn Bond Pad Thickness (μm)
encapsulation and intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature
should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C
(< 5 seconds).
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown.
and operated at 50 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and intrinsic AuSn metal die
attach). Optical characteristics measured in an integrating sphere using Illuminance E.
CPR3EL Rev. -
A
= 25°C
Notes 1&3
Min.
Note 2
2.8
2.8
Forward Voltage (V
A
= 25°C, If = 50 mA
Typ.
Note 2
3.1
3.1
f
, V)
Max.
3.4
3.4
Note 3
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
Dimension
296 x 416
350 x 470
200 x 320
155
296
236
296
90
90
3
CxxxDA3547-Sxx00
CxxxDA3547-Sxx00
-40°C to +100°C
-40°C to +100°C
Full Width Half Max
200 mA
250 mA
1000 V
Class 2
135°C
5 V
USA Tel: +1.919.313.5300
D
Typ.
, nm)
20
21
Tolerance
Durham, NC 27703
4600 Silicon Drive
±0.5
±35
±35
±35
±15
±15
±35
±35
±35
±15
www.cree.com
Cree, Inc.

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