rt3xbbm ISAHAYA ELECTRONICS CORPORRATION, rt3xbbm Datasheet - Page 2

• Manufacturer Part Number: rt3xbbm
• Description: Composite Transistor
• Manufacturer: ISAHAYA ELECTRONICS CORPORRATION

TYPICAL CHARACTERISTICS (Tr1、Tr2)
100
0.1
10
Electrical characteristics
1
V
V
V
I
I
ｈ
VCE(sat)
R1
fT
Ron
0.1
CBO
EBO
Symbol
CBO
EBO
CEO
ＦＥ
VCE=0.2V
75℃
Ta=-40℃
25℃
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
Output On-resistance
COLLECTOR CURRENT IC (mA)
VS. COLLECTOR CURRENT
1
INPUT ON VOLTAGE
（Ta=25℃）
Parameter
10
ISAHAYA ELECTRONICS CORPORATION
100
Ｉ
I
I
V
V
V
I
V
V
E
C
C
C
=50μA ,
=50μA , I
=1mA , R
CB
EB
CE
=10mA , I
CE
I
=7V, f=1MHz
=40V , I
=5V , I
1000
=40V , I
=10V, I
C
BE
=-10mA
C
C
E
B
E
E
=0mA
=0mA
=0mA
=0.5mA
=∞
=0mA
=-10mA, f=100MHz
Test conditions
1000
100
10
-
0
VCE=5V
0.2
INPUT OFF VOLTAGE VI(OFF) (V)
VS. INPUT OFF VOLTAGE
COLLECTOR CURRENT
0.4
Silicon NPN Epitaxial Type
Min
820
40
40
20
7
For Muting Application
RT3XBBM
Composite Transistor
Limits
Typ
0.94
10
10
35
0.6
Max
2500
0.5
0.5
13
0.8
Ta=-40℃
25℃
75℃
Unit
MHz
μA
μA
KΩ
mV
Ω
V
V
V
-
1