ssf4953 Silikron Semiconductor Co.,LTD., ssf4953 Datasheet - Page 2

• Manufacturer Part Number: ssf4953
• Description: The Ssf4953 Uses Advanced Trench Technology To Provide Excellent Rds On , Low Gate Charge. It Has Been Optimized For Power Management Applications Requiring A Wide Range Of Gave Drive Voltage Ratings 4.5v ? 25v .
• Manufacturer: Silikron Semiconductor Co.,LTD.

ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
R
V
C
t
t
DS(ON)
C
V
C
Q
Q
g
GS(th)
d(on)
d(off)
Q
I
t
t
FS
oss
SD
rss
S
lss
r
f
gs
gd
g
2
V =V
V =-10V, I
V =-10V,R
V =-4.5V, I
V =-5V, I
V =-15V,V
I
V =-15V, I
DS
D
GS
GS
V =0V,I =-2.1A
GS
DS
DS
=-4.5A,V
DD
GS
F=1.0MHz
V
GS
DS
, I
=-15V,
D
S
D
GS
D
=-250μA
GEN
GS
=-5.3A
D
D
http://www.silikron.com
=-5.3A
=-10V
=-1A
=-4A
=0V,
=6Ω
-1
525
135
-0.8
46
70
70
13
14
12
SSF4953
8
7
9
2
3
-1.2
-2.1
53
85
14
24
25
17
-2
v1.2
mΩ
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
S
V
A