fd200h06a5b International Rectifier Corp., fd200h06a5b Datasheet - Page 2

• Manufacturer Part Number: fd200h06a5b
• Description: Fred Wafer Form
• Manufacturer: International Rectifier Corp.

Preliminary Data Sheet PD-20534 rev. A 06/01
FD200H06A5B
Electrical Characteristics (Wafer Form)
Ordering Information Table
2
Mechanical Data
V
V
I
t
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Reject Ink Dot Size
Recommended Storage Environment
RM
rr
FM
RRM
Parameters
Maximum Forward Voltage
Mimunum Reverse Breakdown Voltage
Max. Reverse Leakage Current
Typ. Reverse Recovery Time
1
2
3
4
5
6
7
Device Code
-
-
-
-
-
-
-
Fred Die
Chip Dimension in Mils:
Process
Voltage code Vrrm (*100) eg:
Chip surface metallization:
Wafer diameter in inches
Packaging:
FD 200
1
2
H
3
200 = 200x200 square
H
06 = 600V
B
A = Aluminium (anode), Silver (cathode)
Units
100µA
600 V
20 ns
2.3 V
06
4
= HyperFast
= Inked Probed Unsawn Wafer (Wafer in box)
A
5
Test Conditions
T
T
T
I
Cr - Ni - Ag (1 KA - 2 KA - 3 KA)
99% Al, 1% Si (3 microns)
0.200" x 0.200" (see drawing)
0.25 mm diameter minimum
Storage in original container, in dessicated
nitrogen, with no contamination
F
J
J
J
= 1A, di/ dt = 100A/µs, V
= 25°C, I
= 25°C, I
= 25°C, V
5
6
B
7
F
RRM
RRM
= 30 A
= 200 µA
= 600 V
R
= 30 V
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