fmc16n60e Fuji Electric holdings CO.,Ltd, fmc16n60e Datasheet

fmc16n60e

Manufacturer Part Number

fmc16n60e

Description

N-channel Silicon Power Mosfet

Manufacturer

Fuji Electric holdings CO.,Ltd

Datasheet

1.FMC16N60E.pdf (5 pages)

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FMI16N60E

Super FAP-E

Note *1 : Tch≤150°C

Note *2 : Stating Tch=25°C, I

Description

Drain-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Gate-Source Voltage

Repetitive and Non-Repetitive Maximum Avalanche Current

Non-Repetitive Maximum Avalanche Energy

Repetitive Maximum Avalanche Energy

Peak Diode Recovery dV/dt

Peak Diode Recovery -di/dt

Maximum Power Dissipation

Operating and Storage Temperature range

Description

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Drain-Source On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Time

Turn-Off Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Avalanche Capability

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

Description

Thermal resistance

Absolute Maximum Ratings at Tc=25°C (unless otherwise speciﬁed)

Electrical Characteristics at Tc=25°C (unless otherwise speciﬁed)

Thermal Characteristics

Features

Maintains both low power loss and low noise

Lower R

More controllable switching dv/dt by gate resistance

Smaller V

Narrow band of the gate threshold voltage (3.0±0.5V)

High avalanche durability

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DC converters

Maximum Ratings and Characteristics

See to 'Avalanche Energy' graph.

limited by maximum channel temperature and avalanche current.

(on) characteristic

ringing waveform during switching

=7A, L=20.8mH, Vcc=60V, R

series

=50Ω

Symbol

Ciss

Coss

Crss

td(on)

td(off)

trr

Qrr

Symbol

Rth (ch-c)

Rth (ch-a)

DSS

GSS

DSS

(th)

(on)

Conditions

f=1MHz

L=1.74mH, T

-di/dt=100A/µs, Tch=25°C

=16A, V

=250µA, V

=8A, V

=8A

=16A

=300V

=600V, V

=480V, V

=±30V, V

=25V

=0V

=10V

=10Ω

Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.

Note *4 : I

Note *5 : I

Symbol

dV/dt

-di/dt

=10V

=25V

T-Pack(L)

=0V, T

=0V

stg

DSX

Outline Drawings [mm]

=25°C

=0V

Channel to ambient

See to the 'Transient Themal impeadance' graph.

Test Conditions

Channel to case

≤-I

=25°C

, -di/dt=100A/µs, Vcc≤BV

, dv/dt=5.2kV/µs, Vcc≤BV

N-CHANNEL SILICON POWER MOSFET

=25°C

=125°C

Characteristics

-55 to + 150

DSS

554.8

, Tch≤150°C.

2.16

600

±64

±30

100

270

150

±16

5.2

min.

600

2.5

Equivalent circuit schematic

2650

0.90

0.40

kV/µs

typ.

230

typ.

120

3.0

0.7

A/µs

Unit

°C

Gate(G)

FUJI POWER MOSFET

0.460

max.

3980

max.

0.47

25.5

1.35

62.0

250

100

345

180

114

3.5

Drain(D)

Source(S)

Remarks

Ta=25°C

Tc=25°C

Note*1

Note*2

Note*3

Note*4

Note*5

= -30V

°C/W

Unit

µA

µC

µs

Ω

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