fmc65n15t2 Fuji Electric holdings CO.,Ltd, fmc65n15t2 Datasheet - Page 4

• Manufacturer Part Number: fmc65n15t2
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

Fuji Electric Device Technology Co.,Ltd.
Dynamic Ratings
Forward
Input Capacitance
Output Capacitance
Reverse Transfer
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Reverse Diode
Diode Forward
Reverse Recovery
Reverse Recovery
7.Thermal Resistance
Channel to Case
Channel to Ambient
Note *1 : Tch 150°C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25 C,I
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *4 : I
Transconductance g
Description
Description
Description
E
See to the 'Avalanche Energy' graph of page 21/22.
See to the 'Maximum Transient Thermal impedance' graph of page 22/22.
F
Capacitance Crss
AS
 -I
On-Voltage V
limited by maximum channel temperature and avalanche current.
D
,-di/dt=50A/ s,Vcc BV
Charge Qrr
Time trr
Ciss
Coss
td(on)
tr
td(off)
tf
Q
Q
Q
Rth(ch-c)
Rth(ch-a)
Symbol
fs
Symbol
SD
G
GS
GD
AS
=26A,L=1.3mH,Vcc=48V,R
I
V
V
V
f=1MHz
V
V
I
R
V
I
V
I
V
I
V
-di/dt=100A/ s
T
D
D
D
F
F
ch
DS
DS
GS
cc
GS
cc
GS
=65A
GS
=65A
GS
GS
=32.5A
=32.5A
=65A
Symbol
DSS
=25 C
=90V
=90V
=25V
=25V
=0V
=10V
=10V
=0V
=0V
=10
,Tch 150 C
Conditions
Conditions
T
ch
=25 C
G
= 5 0 Ω , S e e F i g . 1 a n d F i g . 2
MS5F6121
min.
min.
min.
14
-
-
-
-
-
-
-
-
-
-
-
-
-
6600
1.00
0.75
typ.
540
310
160
140
typ.
140
typ.
28
36
56
80
32
44
0.463
max.
9900
max.
max.
1.50
810
465
240
120
210
54
84
48
66
75
-
-
-
4 / 22
H04-004-03
 C/W
 C/W
Unit
Unit
Unit
 C
nC
pF
ns
ns
S
V
a