mt36htf25672py-53e Micron Semiconductor Products, mt36htf25672py-53e Datasheet
mt36htf25672py-53e
Related parts for mt36htf25672py-53e
mt36htf25672py-53e Summary of contents
Page 1
DDR2 SDRAM Registered DIMM (RDIMM) MT36HTF25672(P) – 2GB MT36HTF51272(P) – 4GB For the latest component data sheets, refer to Micron’s Web site: Features • 240-pin, registered dual in-line memory module • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 ...
Page 2
Table 2: Addressing Refresh count Row address Device bank address Device page size per bank Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 2GB Modules Base device: MT47H128M4 Module 1 Part Number Density ...
Page 3
Pin Assignments and Descriptions Table 5: Pin Assignments 240-Pin RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ19 61 REF DQ0 33 DQ24 63 4 DQ1 34 ...
Page 4
Table 6: Pin Descriptions Symbol Type ODT0, ODT1 Input On-die termination: ODT (registered HIGH) enables termination resistance internal to the (SSTL_18) DDR2 SDRAM. When enabled, ODT is only applied to the following pins: DQ, DQS, DQS#, and CB. The ODT ...
Page 5
Functional Block Diagrams Figure 2: Functional Block Diagram – 2GB V SS RS0# RS1# DQS0 DQS0# DQS1 DQS1# DQS2 DQS2# DQS3 DQS3# DQS8 DQS8# DQS4 DQS4# DQS5 DQS5# DQS6 DQS6# DQS7 DQS7# Rank 0 = U1–U5, U8–U16, U18–U21 Rank 1 ...
Page 6
Figure 3: Functional Block Diagram – 4GB V SS RS0# RS1# Rank 0 = U1–U5, U8–U16, U18–U21 Rank 1 = U22–U25, U27–U40 S0# S1# BA0–BA1 A0–A13 RAS# CAS# WE# CKE0 CKE1 ODT0 ODT1 PAR_IN RESET# PDF: 09005aef818e3fc8/Source: 09005aef818e3fdb HTF36C256_512x72.fm - ...
Page 7
General Description The MT36HTF25672(P) and MT36HTF51272(P) DDR2 SDRAM modules are high-speed, CMOS, dynamic random-access 2GB and 4GB memory modules, organized in x72 configurations. These DDR2 SDRAM modules use internally configured 4-bank or 8- bank (512Mb, 1Gb) DDR2 SDRAM devices. DDR2 ...
Page 8
Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these, or any other conditions above those indicated in each ...
Page 9
I Specifications DD Table 9: DDR2 I Specifications and Conditions – 2GB DD Values shown for MT47H128M4 DDR2 SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter/Condition Operating one bank ...
Page 10
Table 10: DDR2 I Specifications and Conditions – 4GB DD Values shown for MT47H256M4 DDR2 SDRAM only and are computed from values specified in the 1Gb (256 Meg x 4) component data sheet Parameter/Condition Operating one bank active-precharge current: t ...
Page 11
Register and PLL Specifications Table 11: Register Specifications SSTU32868 devices or equivalent JESD82-14 for the 4GB and SSTU32866 devices or equivalent JESD82-10 for the 2GB Parameter Symbol DC high-level input voltage ...
Page 12
Table 12: PLL Specifications CU877 device or equivalent JESD82-8.01 Parameter Symbol DC high-level input voltage V DC low-level input voltage V Input voltage (limits high-level input voltage V DC low-level input voltage V Input differential-pair cross V voltage ...
Page 13
Serial Presence-Detect Table 14: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input ...
Page 14
Table 16: Serial Presence-Detect Matrix Byte Description 0 Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on SDRAM 4 Number of column addresses on ...
Page 15
Table 16: Serial Presence-Detect Matrix (continued) Byte Description 26 SDRAM access from CK, 27 MIN row precharge time, 28 MIN row active-to-row active, 29 MIN RAS#-to-CAS# delay, 30 MIN active-to-precharge time, 31 Module rank density 32 Address and command setup ...
Page 16
Table 16: Serial Presence-Detect Matrix (continued) Byte Description 45 SDRAM device MAX read data hold skew factor, t QHS 46 PLL relock time 47–61 Optional features, not supported 62 SPD revision 63 Checksum for bytes 0–62 ECC/ECC and Parity 64 ...
Page 17
Module Dimensions Figure 4: 240-Pin DDR2 RDIMM – 2GB 2.0 (0.079) R (4X) U12 U13 U14 2.50 (0.098) D (2X) 2.30 (0.091) TYP PIN 1 2.21 (0.087) TYP 1.0 (0.039) TYP 1.0 (0.039) TYP 70.66 (2.782) TYP ...
Page 18
Figure 5: 240-Pin DDR2 RDIMM – 4GB 2.0 (0.079 (4X) U12 U13 U14 2.50 (0.098) D (2X) 2.30 (0.091) TYP PIN 1 2.21 (0.087) TYP 1.0 (0.039) TYP 1.0 (0.039) TYP 70.66 (2.782) TYP U22 U23 ...