mt3s03at TOSHIBA Semiconductor CORPORATION, mt3s03at Datasheet - Page 2
mt3s03at
Manufacturer Part Number
mt3s03at
Description
Toshiba Transistor Silicon Npn Epitaxial Planar Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.MT3S03AT.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT3S03AT
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
mt3s03at(TE85L,F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Electrical Characteristics
Caution
This device is sensitive to electrostatic discharge. Please handle with caution.
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Note: C
re
Characteristics
is measured by 3 terminal method with capacitance bridge.
(Ta = 25°C)
Symbol
I
I
CBO
EBO
h
C
FE
re
V
V
V
V
CB
EB
CE
CB
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
2
C
E
C
E
Test Condition
= 0
= 0
= 0, f = 1 MHz
= 5 mA
(Note)
Min
80
⎯
⎯
⎯
Typ.
0.75
⎯
⎯
⎯
MT3S03AT
2007-11-01
Max
160
0.1
1.1
1
Unit
μA
μA
pF