mt3s22p TOSHIBA Semiconductor CORPORATION, mt3s22p Datasheet - Page 4
mt3s22p
Manufacturer Part Number
mt3s22p
Description
Toshiba Transistor Silicon Npn Epitaxial Planar Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.MT3S22P.pdf
(5 pages)
2000
1800
1600
1400
1200
1000
800
600
400
200
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
0
2
1
0
0
0.1
Collector-base voltage V
Cob
Cre
Ambient temperature T
25
The device is mounted on a ceramic-
50
Device only
C
board (25mm×25mm×0.8mm(t))
re
,C
P
75
ob
C
1
-T
-V
a
CB
CB
100
a
(V)
(
°C
)
125
Ta=25℃
f=1MHz
IE=0
150
10
4
38
36
34
32
30
28
26
24
22
20
18
10
Pin=-15dBmW
f=500MHz
(⊿1MHz)
Ta=25℃
Collector-current I
OIP
VCE=5V
3
-I
C
MT3S22P
2009-12-10
VCE=4V
C
(mA)
100