om60n10sc International Rectifier Corp., om60n10sc Datasheet

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om60n10sc

Manufacturer Part Number
om60n10sc
Description
Low Voltage, Low Rds On Power Mosfets In Hermetic Isolated Package
Manufacturer
International Rectifier Corp.
Datasheet
LOW VOLTAGE, LOW R
IN HERMETIC ISOLATED PACKAGE
4 11 R1
Supersedes 2 07 R0
FEATURES
• Isolated Hermetic Metal Packages
• Ultra Low R
• Low Conductive Loss/Low Gate Charge
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate change simpler drive circuitry.
MAXIMUM RATINGS
OM60N10SC
OM55N10SC
OM55N10SA
OM75N06SC
OM75N06SA
OM75N05SC
OM75N05SA
PART NO.
Gate
Source
SCHEMATIC
DS(on)
50V, 60V, And 100V Ultra Low R
Power MOSFETs In TO-254 And TO-258
Isolated Packages
Drain
V
DS
100
100
100
60
60
50
50
(V)
(Per Device)
R
DS(on)
.025
.030
.035
.016
.018
.016
.018
3.1 - 47
DS(on)
OM55N10SC
OM55N10SA
( )
POWER MOSFETS
I
D
60
55
55
75
75
75
75
Pin 1:
Pin 2:
Pin 3:
(A)
TO-254AA
OM60N10SC
OM75N05SA
1
PIN CONNECTION
2
Drain
Source
Gate
3
DS(on)
OM75N05SC
OM75N06SA
TO-258AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
Package
Pin 1:
Pin 2:
Pin 3:
TO-258AA
1
2
Drain
Source
Gate
3
OM75N06SC
3.1

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om60n10sc Summary of contents

Page 1

... MAXIMUM RATINGS PART NO. V (V) DS OM60N10SC 100 OM55N10SC 100 OM55N10SA 100 OM75N06SC 60 OM75N06SA 60 OM75N05SC 50 OM75N05SA 50 SCHEMATIC Drain Gate Source Supersedes OM55N10SC OM60N10SC OM55N10SA OM75N05SA POWER MOSFETS DS(on) DS(on) (Per Device (A) DS(on) D .025 60 .030 55 .035 55 .016 75 .018 75 .016 75 .018 75 ...

Page 2

OM55N10SA - OM75N06SC ABSOLUTE MAXIMUM RATINGS (T Parameter V Drain-Source Voltage DS V Drain-Gate Voltage (R DGR 25°C Continuous Drain Current 100°C Continuous Drain Current Pulsed Drain ...

Page 3

... OM60N10SC (T = 25°C unless otherwise specified) C Avalanche Characteristics Min. Typ. Max. Units Test Conditions I Avalanche Current Single Pulse Avalanche Energy 720 Repetitive Avalanche Energy 100 Avalanche Current Electrical Characteristics - OFF V Drain-Source 100 V (BR)DSS Breakdown Voltage I Zero Gate Voltage 250 µ ...

Page 4

OM55N10SA (T = 25°C unless otherwise specified) C Avalanche Characteristics Min. Typ. Max. Units Test Conditions I Avalanche Current Single Pulse Avalanche Energy 600 Repetitive Avalanche Energy 100 Avalanche Current ...

Page 5

OM75N06SA (T = 25°C unless otherwise specified) C Avalanche Characteristics Min. Typ. Max. Units Test Conditions I Avalanche Current Single Pulse Avalanche Energy 900 Repetitive Avalanche Energy 200 Avalanche Current ...

Page 6

OM75N05SA (T = 25°C unless otherwise specified) C Avalanche Characteristics Min. Typ. Max. Units Test Conditions I Avalanche Current Single Pulse Avalanche Energy 900 Repetitive Avalanche Energy 200 Avalanche Current ...

Page 7

OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA Transconductance g ( 40° 25° 125° > D(on) DS(on)max 100 ...

Page 8

OM55N10SA - OM75N06SC OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA Transconductance g ( > D(on) DS(on)max Gate Charge vs Gate-Source Voltage V ( ...

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