sg200n06s Sirectifier Semiconductors, sg200n06s Datasheet - Page 2

• Manufacturer Part Number: sg200n06s
• Description: Discrete Igbts
• Manufacturer: Sirectifier Semiconductors

Symbol
R
R
C
t
C
C
t
t
t
Q
Q
E
E
E
E
d(off)
d(on)
d(on)
d(off)
thCK
g
Q
thJC
oes
t
t
t
t
ies
res
on
off
on
off
ge
gc
ts
ri
fi
ri
fi
g
I
Pulse test, t 300us, duty cycle 2%
V
I
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
Inductive load, T
I
V
Remarks:Switching times may
increase for V
higher T
C
C
C
C
CE
CE
CE
=60A; V
=I
=I
=I
=25V; V
C90
C90
=0.8V
C90
=0.8V
CE
; V
; V
; V
(Clamp)
J
GE
GE
GE
CES
CES
or increased R
CE
=15V; V
=15V; L=30uH
=15V; L=30uH
GE
=10V
G
; R
; R
CE
=0V; f=1MHz
G
G
(Clamp)
J
J
=R
=R
=25
=125
Test Conditions
0.8V
CE
off
off
o
=2.4
=2.4
=0.5V
C
o
CES'
C
G
SG200N06S
higher T
0.8V
CES
Discrete IGBTs
CES'
J
or
min.
40
Characteristic Values
(T
J
=25
o
9000
14.4
14.4
0.05
C , unless otherwise specified)
100
100
100
typ.
800
350
780
250
600
305
465
228
200
2.4
4.8
52
57
1100
max.
0.21
500
K/W
K/W
Unit
mJ
mJ
mJ
mJ
nC
pF
ns
ns
ns
ns
ns
ns
ns
ns
S