sg25672rddr6h2bgic ETC-unknow, sg25672rddr6h2bgic Datasheet - Page 15

• Manufacturer Part Number: sg25672rddr6h2bgic
• Description: Dram Module Ddr Sdram 2gbyte 184rdimm
• Manufacturer: ETC-unknow

Capacitance
(V
(V
AC Operating Conditions
(V
Notes:
1. Input slew rate is 1V/ns.
2. Inputs are not recognized as valid until V
3. V
4. The value of V
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Parameter
Input Capacitance (Address & Control)
Input Capacitance (CK0, CK0#)
Input Capacitance (DQS0~DQS17)
Input/Output Capacitance (DQ0~DQ63, CB0~CB7)
Parameter
Input Leakage Current
Output Leakage Current
Output High Current
Output Low Current
Parameter
Input High Logic Voltage
Input Low Logic Voltage
Input differential voltage, CK and CK# inputs
Input crossing point voltage, CK and CK#
inputs
DD
DD
DD
level of the same.
ID
= 2.5V±0.2V, T
= 2.5V±0.2V, V
= 2.5V±0.2V, V
is the magnitude of the difference between the input level on CK and the input level on CK#.
IX
is expected to equal 0.5*V
A
SS
SS
= +25°C, f = 1MHz)
= 0V, T
= 0V, T
A
A
= 0 to +70°C)
= 0 to +70°C)
Symbol
I
I
I
OH
I
OZ
OL
REF
LI
DDQ
stabilizes.
Symbol
V
V
V
V
IH(AC)
ID(AC)
IX(AC)
IL(AC)
of the transmitting device and must track variations in the DC
Test conditions
0V ≤ V
0V ≤ V
DQ’s are disabled
V
V
OUT
OUT
= V
= V
out
in
0.5*V
≤ V
V
TT
TT
≤ V
REF
SG25672RDDR6H2BGUU
DD
+ 0.84V
- 0.84V
0.62
DDQ
DD
Min
-
+ 0.31
- 0.2
0.5*V
V
V
Symbol
DDQ
REF
C
-16.8
C
C
C
16.8
Min
DDQ
Max
-10
I/O
-4
I1
I2
I3
-
- 0.31
+ 0.6
+ 0.2
Max
Max
Unit
10
10
10
10
10
4
July 5, 2007
-
-
V
V
V
V
1, 2
1, 2
1, 2, 3
1, 2, 3
Notes
Unit
Unit
mA
mA
μA
μA
pF
pF
pF
pF
15