s9066-01 Hamamatsu Photonics, K.K.,, s9066-01 Datasheet - Page 2

• Manufacturer Part Number: s9066-01
• Description: Photo Ic Diode
• Manufacturer: Hamamatsu Photonics, K.K.,

2
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]
Spectral response
Rise/fall times vs. load resistance
Dimensional outlines (unit: mm)
0.01
100
0.1
PHOTOSENSITIVE
SURFACE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
(2 ×)
(DEPTH 0.15)
1
0
100
200
(4 ×) 0.55
(2 ×) 0.45
1.0
(SPECIFIED AT THE LEAD ROOT)
(Typ. Ta=25 ˚C, V
400
10˚
5˚
2.5 ± 0.2
(INCLUDIG BURR)
1 k
LOAD RESISTANCE ( )
1.27 1.27 1.27
WAVELENGTH (nm)
5.2 ± 0.3
S9066-01
S9067-01
5.0
tr
600
R
=7.5 V, =560 nm, Vo=2.5 V)
10 k
10˚
5˚
S9066-01
(Typ. Ta=25 ˚C, V
tf
800
CENTER OF ACTIVE AREA
ACTIVE AREA 0.64 × 0.52
CONVENTIONAL
TYPE
100 k
1000
R
Tolerance unless otherwise
noted: ±0.1,
Shaded area indicates burr.
Values in parentheses indicate
reference value.
=5 V)
Pin be connected to
Pin on the PC board.
ANODE
(ANODE)
NC
CATHODE
1200
1 M
KPICB0077EA
KPICB0078EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K.
1.0
2.0
±2˚
0.25
+0.15
-0.1
THE DRAWING SURROUNDED
BY THE DOTTED LINE SHOWS
A SCHEMATIC DIAGRAM OF
THE PHOTO IC.
2.0 (DEPTH 0.15)
Operating circuit example
Linearity (S9066-01)
100 µA
100 nA
10 mA
10 µA
10 nA
1 mA
1 µA
0.1
KPICA0050EC
PHOTODIODE
FOR SIGNAL OFFSET
1
ILLUMINANCE (lx)
CURRENT AMP
(APPROX. 10000 times)
Photo IC diode
(Typ. Ta=25 ˚C, V
10
CATHODE
ANODE
C
L
100
R
=5 V, 2856 K)
R
L
Vout
PHOTODIODE
FOR SIGNAL DETECTION
0.4
1000
KPICB0083EA
INTERNAL PROTECTION
RESISTANCE
(APPROX. 150
REVERSE BIAS
POWER SUPPLY
3.2 ± 0.2
2.0 ± 0.1
2.2 ± 0.2
S9066-01, S9067-01
KPICC0091EA
0.4
9
)
Dark current vs. ambient temperature
CENTER OF ACTIVE AREA
ACTIVE AREA 0.52 × 0.64
100 nA
100 pA
100 fA
10 µA
10 nA
10 pA
1 µA
1 nA
1 pA
(4 ×) 0.5
S9067-01
-25
The photo IC diode must be reverse-
biased so that a positive potential
is applied to the cathode.
To eliminate high-frequency
components, we recommend
placing a load capacitance C
parallel with load resistance R
a low-pass filter.
Cut-off frequency fc =
AMBIENT TEMPERATURE (˚C)
0
Tolerance unless otherwise
noted:
Active area position accuracy: X, Y
CATHODE
ANODE
Electrodes
25
±0.2
50
.
.
(Typ. V
2 C
75
Cat. No. KPIC1052E03
Mar. 2005 DN
1
R
L
=5 V)
R
£
±0.3
L
100
L
KPICA0051EB
L
KPICB0076EA
in
as