mt48lc4m32b2tg-7-it Micron Semiconductor Products, mt48lc4m32b2tg-7-it Datasheet - Page 12
mt48lc4m32b2tg-7-it
Manufacturer Part Number
mt48lc4m32b2tg-7-it
Description
128mb X32 Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT48LC4M32B2TG-7-IT.pdf
(66 pages)
- Current page: 12 of 66
- Download datasheet (2Mb)
Burst Type
Figure 4:
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. K 9/07 EN
Mode Register Definition
M8
0
–
M9
0
1
M7
0
–
Reserved states should not be used, as unknown operation or incompatibility with
future versions may result.
When a READ or WRITE command is issued, a block of columns equal to BL is effectively
selected. All accesses for that burst take place within this block, meaning that the burst
will wrap within the block if a boundary is reached. The block is uniquely selected by A1–
A7 when BL = 2; by A2–A7 when BL = 4; and by A3–A7 when BL = 8. The remaining (least
significant) address bit(s) is (are) used to select the starting location within the block.
Full-page bursts wrap within the page if the boundary is reached.
Accesses within a given burst may be programmed to be either sequential or interleaved;
this is referred to as the burst type and is selected via bit M3.
The ordering of accesses within a burst is determined by BL, the burst type and the
starting column address, as shown in Table 6 on page 13.
M11, M10, BA0, BA1 = “0”
Programmed Burst Length
M6–M0
Defined
Single Location Access
to ensure compatibility
–
Write Burst Mode
with future devices.
Operating Mode
Standard Operation
All other states reserved
Program
Reserved WB
11
A11
10
A10
M6
0
0
0
0
1
1
1
1
9
A9
M5
Op Mode
0
0
1
1
0
0
1
1
8
A8
M4
0
1
0
1
0
1
0
1
7
A7
12
CAS Latency
6
A6
CAS Latency
5
Reserved
Reserved
Reserved
Reserved
Reserved
A5
1
2
3
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
A4
M3
BT
0
1
3
A3
A2
0
0
0
0
1
1
1
1
Burst Length
2
A2
A1
0
0
1
1
0
0
1
1
A0
1
0
1
0
1
0
1
0
1
A1
0
A0
Reserved
Reserved
Reserved
Full Page
M3 = 0
Burst Type
Interleaved
Sequential
1
2
4
8
Mode Register (Ax)
Address Bus
Burst Length
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
Register Definition
Reserved
Reserved
Reserved
Reserved
M3 = 1
1
2
4
8
Related parts for mt48lc4m32b2tg-7-it
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
VFBGA 63/I//MICRON NAND FLASH 1Gb Mass Storage
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
SYNCHRONOUS DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Q-FLASHTM MEMORY
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 60ns
Manufacturer:
Micron Semiconductor Products
Datasheet: